Single-event gate rupture in vertical power MOSFETs; an original empirical expression
Wheatley, C.F., Titus, J.L., Burton, D.I.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1994)
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1994)
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Conference Proceeding
SEGR and SEB in n-channel power MOSFETs
Allenspach, M., Dachs, C., Johnson, G.H., Schrimpf, R.D., Lorfevre, E., Palau, J.M., Brews, J.R., Galloway, K.F., Titus, J.L., Wheatley, C.F.
Published in IEEE transactions on nuclear science (01.12.1996)
Published in IEEE transactions on nuclear science (01.12.1996)
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Journal Article
A conceptual model of a single-event gate-rupture in power MOSFETs
Brews, J.R., Allenspach, M., Schrimpf, R.D., Galloway, K.F., Titus, J.L., Wheatley, C.F.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1993)
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1993)
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Conference Proceeding
Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence
Allenspach, M., Mouret, I., Titus, J.L., Wheatley, C.F., Pease, R.L., Brews, J.R., Schrimpf, R.D., Galloway, K.F.
Published in IEEE transactions on nuclear science (01.12.1995)
Published in IEEE transactions on nuclear science (01.12.1995)
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Journal Article
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs
Titus, J.L., Wheatley, C.F., Allenspach, M., Schrimpf, R.D., Burton, D.I., Brews, J.R., Galloway, K.F., Pease, R.L.
Published in IEEE transactions on nuclear science (01.12.1996)
Published in IEEE transactions on nuclear science (01.12.1996)
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Journal Article
SEGR: A unique failure mode for power MOSFETs in spacecraft
Allenspach, M., Brews, J.R., Galloway, K.F., Johnson, G.H., Schrimpf, R.D., Pease, R.L., Titus, J.L., Wheatley, C.F.
Published in Microelectronics and reliability (01.11.1996)
Published in Microelectronics and reliability (01.11.1996)
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Conference Proceeding
Measurement of a cross-section for single-event gate rupture in power MOSFETs
Mouret, I., Calvel, P., Allenspach, M., Titus, J.L., Wheatley, C.F., LaBel, K.A., Calvet, M.-C., Schrimpf, R.D., Galloway, K.F.
Published in IEEE electron device letters (01.04.1996)
Published in IEEE electron device letters (01.04.1996)
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Journal Article
The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics
DOLN, G. M, SAPP, S, ELBAIAWAY, A, WHEATLEY, C. F
Published in 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (2004)
Published in 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (2004)
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Conference Proceeding
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
Titus, J.L., Wheatley, C.F., Burton, D.I., Mouret, I., Allenspach, M., Brews, J., Schrimpf, R., Galloway, K., Pease, R.L.
Published in IEEE transactions on nuclear science (01.12.1995)
Published in IEEE transactions on nuclear science (01.12.1995)
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Journal Article
The effects of ionizing radiation on power-MOSFET termination structures
Davis, K.R., Schrimpf, R.D., Cellier, F.E., Galloway, K.F., Burton, D.I., Wheatley, C.F.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) (01.12.1989)
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) (01.12.1989)
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Conference Proceeding
An improved stripe-cell SEGR hardened power MOSFET technology
Savage, M.W., Burton, D.I., Wheatley, C.F., Titus, J.L., Gillberg, J.E.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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Journal Article
Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution
Wheatley, T.H., Wheatley, C.F., Titus, J.L.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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