III–V compound semiconductor transistors—from planar to nanowire structures
Riel, Heike, Wernersson, Lars-Erik, Hong, Minghwei, del Alamo, Jesús A.
Published in MRS bulletin (01.08.2014)
Published in MRS bulletin (01.08.2014)
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Journal Article
III–V Nanowire Complementary Metal–Oxide Semiconductor Transistors Monolithically Integrated on Si
Svensson, Johannes, Dey, Anil W, Jacobsson, Daniel, Wernersson, Lars-Erik
Published in Nano letters (09.12.2015)
Published in Nano letters (09.12.2015)
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Journal Article
As-deposited ferroelectric HZO on a III–V semiconductor
Andersen, André, Persson, Anton E. O., Wernersson, Lars-Erik
Published in Applied physics letters (04.07.2022)
Published in Applied physics letters (04.07.2022)
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Journal Article
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin, Hellenbrand, Markus, Lind, Erik, Persson, Axel R, Sant, Saurabh, Schenk, Andreas, Svensson, Johannes, Wallenberg, Reine, Wernersson, Lars-Erik
Published in Nano letters (12.07.2017)
Published in Nano letters (12.07.2017)
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Journal Article
Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si
Memisevic, Elvedin, Svensson, Johannes, Hellenbrand, Markus, Lind, Erik, Wernersson, Lars-Erik
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Journal Article
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Zhu, Zhongyunshen, Persson, Anton E. O., Wernersson, Lars-Erik
Published in Nature communications (03.05.2023)
Published in Nature communications (03.05.2023)
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Journal Article
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
Johansson, Sofia, Memisevic, Elvedin, Wernersson, Lars-Erik, Lind, Erik
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Zota, Cezar B., Roll, Guntrade, Wernersson, Lars-Erik, Lind, Erik
Published in IEEE transactions on electron devices (01.12.2014)
Published in IEEE transactions on electron devices (01.12.2014)
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Journal Article
Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si
Kilpi, Olli-Pekka, Svensson, Johannes, Wu, Jun, Persson, Axel R, Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik
Published in Nano letters (11.10.2017)
Published in Nano letters (11.10.2017)
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Journal Article
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
Borg, B. Mattias, Dick, Kimberly A., Ganjipour, Bahram, Pistol, Mats-Erik, Wernersson, Lars-Erik, Thelander, Claes
Published in Nano letters (13.10.2010)
Published in Nano letters (13.10.2010)
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Journal Article
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon
Thompson, Michael D, Alhodaib, Aiyeshah, Craig, Adam P, Robson, Alex, Aziz, Atif, Krier, Anthony, Svensson, Johannes, Wernersson, Lars-Erik, Sanchez, Ana M, Marshall, Andrew R. J
Published in Nano letters (13.01.2016)
Published in Nano letters (13.01.2016)
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Journal Article
Compressively-strained GaSb nanowires with core-shell heterostructures
Zhu, Zhongyunshen, Svensson, Johannes, Persson, Axel R., Wallenberg, Reine, Gromov, Andrei V., Wernersson, Lars-Erik
Published in Nano research (01.09.2020)
Published in Nano research (01.09.2020)
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