Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
Deng, Chenkai, Wang, Peiran, Tang, Chuying, Hu, Qiaoyu, Du, Fangzhou, Jiang, Yang, Zhang, Yi, Li, Mujun, Xiong, Zilong, Wang, Xiaohui, Wen, Kangyao, Li, Wenmao, Tao, Nick, Wang, Qing, Yu, Hongyu
Published in Nanomaterials (Basel, Switzerland) (10.09.2024)
Published in Nanomaterials (Basel, Switzerland) (10.09.2024)
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Journal Article
Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors
Hu, Qiaoyu, Cheng, Wei-Chih, Chen, Xiguang, Deng, Chenkai, Liao, Lina, Li, Wenmao, Jiang, Yang, He, Jiaqi, Zhang, Yi, Tang, Chuying, Wang, Peiran, Wen, Kangyao, Du, Fangzhou, Cui, Yifan, Li, Mujun, Yu, Wenyue, Sokolovskij, Robert, Tao, Nick, Wang, Qing, Yu, Hongyu
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
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Journal Article
The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure
Du, Fangzhou, Jiang, Yang, Wu, Zhanxia, Lu, Honghao, He, Jiaqi, Tang, Chuying, Hu, Qiaoyu, Wen, Kangyao, Tang, Xinyi, Hong, Haimin, Yu, Hongyu, Wang, Qing
Published in Crystals (Basel) (19.05.2022)
Published in Crystals (Basel) (19.05.2022)
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Journal Article
Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET
He, Minghao, Wen, Kangyao, Deng, Chenkai, Li, Mujun, Cui, Yifan, Wang, Qing, Yu, Hongyu, Ang, Kah-Wee
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Charge Trapping Layer Enabled Normally-Off β -Ga 2 O 3 MOSFET
He, Minghao, Wen, Kangyao, Deng, Chenkai, Li, Mujun, Cui, Yifan, Wang, Qing, Yu, Hongyu, Ang, Kah-Wee
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor
Fan, Meng-Ya, Sokolovskij, Robert, Wang, Qing, Zheng, Hongze, Wen, Kangyao, Du, Fangzhou, Zhou, Guangnan, Jiang, Yu-Long, Yu, Hongyu
Published in Sensors and actuators. B, Chemical (15.05.2022)
Published in Sensors and actuators. B, Chemical (15.05.2022)
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Journal Article
A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs
Tang, Chuying, Fu, Chun, Du, Fangzhou, Deng, Chenkai, Jiang, Yang, Wen, Kangyao, Zhang, Yi, He, Jiaqi, Li, Wenmao, Hu, Qiaoyu, Wang, Peiran, Tao, Nick, Wang, Qing, Yu, HongYu
Published in Journal of alloys and compounds (25.03.2024)
Published in Journal of alloys and compounds (25.03.2024)
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Journal Article
Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering
Lu, Honghao, Wen, Kangyao, Du, Fangzhou, Tang, Chuying, Cheng, Wei-Chih, Wei, Bowen, Li, Honglin, Wang, Qing, Yu, Hongyu
Published in Materials science in semiconductor processing (01.02.2023)
Published in Materials science in semiconductor processing (01.02.2023)
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Journal Article
High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer
Jiang, Yang, Du, Fangzhou, Wen, Kangyao, He, Jiaqi, Li, Mujun, Tang, Chuying, Zhang, Yi, Wang, Zhongrui, Wang, Qing, Yu, Hongyu
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique
Deng, Chenkai, Wang, Peiran, Tang, Chuying, Hu, Qiaoyu, Du, Fangzhou, Jiang, Yang, Zhang, Yi, Li, Mujun, Xiong, Zilong, Wang, Xiaohui, Wen, Kangyao, Li, Wenmao, Tao, Nick, Wang, Qing, Yu, Hongyu
Published in Nanomaterials (Basel, Switzerland) (10.09.2024)
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Published in Nanomaterials (Basel, Switzerland) (10.09.2024)
Journal Article
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN[sub.x] Stress-Engineering Technique
Deng, Chenkai, Wang, Peiran, Tang, Chuying, Hu, Qiaoyu, Du, Fangzhou, Jiang, Yang, Zhang, Yi, Li, Mujun, Xiong, Zilong, Wang, Xiaohui, Wen, Kangyao, Li, Wenmao, Tao, Nick, Wang, Qing, Yu, Hongyu
Published in Nanomaterials (Basel, Switzerland) (01.09.2024)
Published in Nanomaterials (Basel, Switzerland) (01.09.2024)
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Journal Article
GaN-based phase inverter and preparation method thereof
DENG CHENKAI, TANG CHUYING, YU HONGYU, DU FANGZHOU, JIANG YANG, ZHANG YI, WANG QING, WEN KANGYAO
Year of Publication 26.03.2024
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Year of Publication 26.03.2024
Patent