Semiconductor memory component has bitline contacts with filling which widens towards top, insulating spacer being mounted on this which improves insulation of wordlines
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Year of Publication 23.03.2006
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Year of Publication 23.03.2006
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Nichtflüchtige Halbleiterspeicher und Verfahren zur Herstellung solcher Speicher
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Year of Publication 28.02.2013
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Year of Publication 28.02.2013
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Memory cell with improved data retention has memory layer, at least one bounding layer that is thicker towards lateral edges of channel region than in central region of channel region
KRAUSE, MATHIAS, WEIN, GUENTER, SACHSE, JENS-UWE, KLEINT, CHRISTOPH, DEPPE, JOACHIM, FISCHER, JAN-MALTE
Year of Publication 21.04.2005
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Year of Publication 21.04.2005
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Verfahren zur Herstellung von Ladungseinfang-Speicherbauelementen
LUDWIG, CHRISTOPH, KRAUSE, MATHIAS, SCHLEY, JAN-MALTE, WEIN, GUENTER, ISLER, MARK, SACHSE, JENS-UWE, MACHILL, STEFAN, DEPPE, JOACHIM
Year of Publication 21.02.2013
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Year of Publication 21.02.2013
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Halbleiterspeicher
LUDWIG, CHRISTOPH, KRAUSE, MATHIAS, KLEINT, CHRISTOPH ANDREAS, WEIN, GUENTER, SACHSE, JENS-UWE, DEPPE, JOACHIM
Year of Publication 05.10.2006
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Year of Publication 05.10.2006
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Verfahren zur Herstellung von Charge-trapping-Speicherbauelementen
LUDWIG, CHRISTOPH, KRAUSE, MATHIAS, SCHLEY, JAN-MALTE, WEIN, GUENTER, ISLER, MARK, SACHSE, JENS-UWE, MACHILL, STEFAN, DEPPE, JOACHIM
Year of Publication 12.10.2006
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Year of Publication 12.10.2006
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