Mechanism of Carrier Accumulation at the Hetero Interface between InSb and GaAs
Tanaka, Takeshi, Washima, Mineo, Sakaguchi, Harunori
Published in Japanese Journal of Applied Physics (01.02.1999)
Published in Japanese Journal of Applied Physics (01.02.1999)
Get full text
Journal Article
Highly strained InGaAs layers on GaAs grown by molecular beam epitaxy for high electron mobility transistors
Kudo, Makoto, Mishima, Tomoyoshi, Washima, Mineo
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
Get full text
Journal Article
Conference Proceeding
SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, LEAD FRAME AND METHOD FOR PRODUCING LEAD FRAME
MIWA TAKAO, CHINDA AKIRA, WASHIMA MINEO, OKABE NORIO, WADAYAMA YOSHIHIDE, KAWANOBE TADASHI, INO MASANOBU, TAKAHATA KAZUHIRO
Year of Publication 11.09.2013
Get full text
Year of Publication 11.09.2013
Patent