Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors
Lin, H.-K., Lin, Y.-C., Huang, F.-H., Fan, T.-W., Chiu, P.-C., Chyi, J.-I., Ko, C.-H., Kuan, T.-M., Hsieh, M.-K., Lee, W.-C., Wann, C.H.
Published in Solid-state electronics (01.04.2010)
Published in Solid-state electronics (01.04.2010)
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Journal Article
E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development
LIN, H.-K, FAN, D.-W, LEE, W.-C, WANN, C. H, LIN, Y.-C, CHIU, P.-C, CHIEN, C.-Y, LI, P.-W, CHYI, J.-I, KO, C.-H, KUAN, T.-M, HSIEH, M.-K
Published in Solid-state electronics (01.05.2010)
Published in Solid-state electronics (01.05.2010)
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Journal Article
A comparative study of advanced MOSFET concepts
Wann, C.H., Noda, K., Tanaka, T., Yoshida, M., Chenming Hu
Published in IEEE transactions on electron devices (01.10.1996)
Published in IEEE transactions on electron devices (01.10.1996)
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Journal Article
An accurate semi-empirical saturation drain current model for LDD n-MOSFET
Kai Chen, Wann, H.C., Duster, J., Pramanik, D., Nariani, S., Ko, P.K., Hu, C.
Published in IEEE electron device letters (01.03.1996)
Published in IEEE electron device letters (01.03.1996)
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Journal Article
Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's
Bin Yu, Wann, C.H.J., Nowak, E.D., Noda, K., Chenming Hu
Published in IEEE transactions on electron devices (01.04.1997)
Published in IEEE transactions on electron devices (01.04.1997)
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Journal Article
E-beam-evaporated Al sub(2)O sub(3) for InAs/AlSb metal-oxide-semiconductor HEMT development
Lin, H-K, Fan, D-W, Lin, Y-C, Chiu, P-C, Chien, C-Y, Li, P-W, Chyi, J-I, Ko, C-H, Kuan, T-M, Hsieh, M-K, Lee, W-C, Wann, CH
Published in Solid-state electronics (01.05.2010)
Published in Solid-state electronics (01.05.2010)
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Journal Article
Nanoscale CMOS : Special issue on quantum devices and their applications
WONG, H.-S. P, FRANK, D. J, SOLOMON, P. M, WANN, C. H. J, WELSER, J. J
Published in Proceedings of the IEEE (1999)
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Published in Proceedings of the IEEE (1999)
Journal Article
MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
Chen, Kai, Clement Wann, H., Dunster, Jon, Ko, Ping K., Hu, Chenming, Yoshida, Makoto
Published in Solid-state electronics (01.10.1996)
Published in Solid-state electronics (01.10.1996)
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Journal Article
III-V devices featuring Si transistor-like process and its heterogeneous integration on Si substrate
Ko, C.-H, Wu, C.-H, Cheng, C.-C, Lin, H.-Y, Lin, Y.-R, Wann, C H
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
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Conference Proceeding
In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
Xingui Zhang, Huaxin Guo, Xiao Gong, Qian Zhou, Hau-Yu Lin, You-Ru Lin, Chih-Hsin Ko, Wann, C H, Yee-Chia Yeo
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
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Conference Proceeding
A new self-aligned contact technology for III-V MOSFETs
Huaxin Guo, Xingui Zhang, Hock-Chun Chin, Xiao Gong, Shao-Ming Koh, Chunlei Zhan, Guang-Li Luo, Chun-Yen Chang, Hau-Yu Lin, Chao-Hsin Chien, Zong-You Han, Shih-Chiang Huang, Chao-Ching Cheng, Chih-Hsin Ko, Wann, C H, Yee-Chia Yeo
Published in Proceedings of 2010 International Symposium on VLSI Technology, System and Application (01.04.2010)
Published in Proceedings of 2010 International Symposium on VLSI Technology, System and Application (01.04.2010)
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Conference Proceeding
25 nm CMOS design considerations
Taur, Y., Wann, C.H., Frank, D.J.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding
Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow
PARK, D.-G, LUO, Z. J, CHUDZIK, M, BRULEY, J, GLUSCHENKOV, O, RONSHEIM, P, CHAKRAVARTI, A, MITCHELL, R, KU, V, KIM, H, DUCH, E, KOZLOWSKI, P, EDLEMAN, N, D'EMIC, C, NARAYANAN, V, STEEGEN, A, WISE, R, JAMMY, R, RENGARAJAN, R, NG, H, SEKIGUCHI, A, WANN, C. H, ZHU, W, NGUYEN, P, WONG, K, CABRAL, C, JAMISON, P, LEE, B. H, CHOU, A
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Conference Proceeding