Investigation of Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode
Huang, Jun-Rui, Hsu, Wei-Chou, Chen, Yeong-Jia, Wang, Tzong-Bin, Chen, Huey-Ing, Liu, Wen-Chau
Published in IEEE sensors journal (01.05.2011)
Published in IEEE sensors journal (01.05.2011)
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Journal Article
Characteristics of In0.425Al0.575As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels
HSU, Wei-Chou, CHEN, Yeong-Jia, LEE, Ching-Sung, WANG, Tzong-Bin, HUANG, Jun-Chin, HUANG, Dong-Hai, SU, Ke-Hua, LIN, Yu-Shyan, WU, Chang-Luen
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article
High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT
Hsu, Wei-Chou, Chen, Yeong-Jia, Lee, Ching-Sung, Wang, Tzong-Bin, Lin, Yu-Shyan, Wu, Chang-Luen
Published in IEEE electron device letters (01.02.2005)
Published in IEEE electron device letters (01.02.2005)
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Journal Article
Characteristics of In/sub 0.425/Al/sub 0.575/As-InxGa/sub 1-x/As metamorphic HEMTs with pseudomorphic and symmetrically graded channels
Hsu, Wei-Chou, Chen, Yeong-Jia, Lee, Ching-Sung, Wang, Tzong-Bin, Huang, Jun-Chin, Huang, Dong-Hai, Su, Ke-Hua, Lin, Yu-Shyan, Wu, Chang-Luen
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article
n + -GaAs / p + -InAlGaP / n + -InAlGaP Camel-Gate High-Electron Mobility Transistors
Lin, Y.-S., Huang, D.-H., Hsu, W.-C., Wang, T.-B., Hsu, R.-T., Wu, Y.-H.
Published in Electrochemical and solid-state letters (01.01.2006)
Published in Electrochemical and solid-state letters (01.01.2006)
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Journal Article
Comparison of Al[sub 0.32]Ga[sub 0.68]N∕GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses
Wang, Tzong-Bin, Hsu, Wei-Chou, Su, Jun-Long, Hsu, Rong-Tay, Wu, Yu-Huei, Lin, Yu-Shyan, Su, Ke-Hua
Published in Journal of the Electrochemical Society (2007)
Published in Journal of the Electrochemical Society (2007)
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Journal Article
High-temperature thermal stability performance in delta -doped In sub(0.425)Al sub(0.575)As--In sub(0.65)Ga sub(0.35)As metamorphic HEMT
Hsu, Wei-Chou, Chen, Yeong-Jia, Lee, Ching-Sung, Wang, Tzong-Bin, Lin, Yu-Shyan, Wu, Chang-Luen
Published in IEEE electron device letters (01.01.2005)
Published in IEEE electron device letters (01.01.2005)
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Journal Article
Characteristics of In sub(0.425)Al sub(0.575)As-InxG a sub(1-x)As metamorphic HEMTs with pseudomorphic and symmetrically graded channels
Hsu, Wei-Chou, Chen, Yeong-Jia, Lee, Ching-Sung, Wang, Tzong-Bin, Huang, Jun-Chin, Huang, Dong-Hai, Su, Ke-Hua, Lin, Yu-Shyan, Wu, Chang-Luen
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
Characteristics of In $_0.425$ Al $_0.575$ As–InxGa $_1-x$ As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels
Hsu, W.-C., Chen, Y.-J., Lee, C.-S., Wang, T.-B., Huang, J.-C., Huang, D.-H., Su, K.-H., Lin, Y.-S., Wu, C.-L.
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article
Improved In 0.45 Al 0.55 As/In 0.45 Ga 0.55 As/In 0.65 Ga 0.35 As Inverse Composite Channel Metamorphic High Electron Mobility Transistor
Chen, Yeong-Jia, Lee, Ching-Sung, Wang, Tzong-Bin, Hsu, Wei-Chou, Chen, Yen-Wei, Su, Ke-Hua, Wu, Chang-Luen
Published in Japanese Journal of Applied Physics (01.08.2005)
Published in Japanese Journal of Applied Physics (01.08.2005)
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Journal Article
High breakdown characteristic [delta]-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT
Chen, Yen-Wei, Hsu, Wei-Chou, Shieh, Her-Ming, Chen, Yeong-Jia, Lin, Yu-Shyan, Li, Yih-Juan, Wang, Tzong-Bin
Published in IEEE transactions on electron devices (01.02.2002)
Published in IEEE transactions on electron devices (01.02.2002)
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Journal Article