Efficient and uniform production of III-nitride films by multiwafer MOVPE
Deschler, M, Beccard, R, Wachtendorf, B, Schmitz, D, Juergensen, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
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Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures
Beccard, R, Niebuhr, R, Wachtendorf, B, Schmitz, D, Jürgensen, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (27.02.1998)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (27.02.1998)
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Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization
Beccard, R., Schoen, O., Wachtendorf, B., Schhmitz, D., Juergensen, H., Woelk, E.
Published in Journal of electronic materials (01.10.1997)
Published in Journal of electronic materials (01.10.1997)
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MOVPE production reactors for high temperature electronics
Protzmann, H., Wachtendorf, B., Schoen, O., Schmitz, D., Strauch, G., Juergensen, H.
Published in Journal of electronic materials (01.04.1998)
Published in Journal of electronic materials (01.04.1998)
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Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system
Taudt, W., Wachtendorf, B., Beccard, R., Wahid, A., Heuken, M., Gurskii, A.L., Vakarelska, K.
Published in Journal of crystal growth (01.12.1994)
Published in Journal of crystal growth (01.12.1994)
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Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system
TAUDT, W, WACHTENDORF, B, SAUERLÄNDER, F, HAMADEH, H, LAMPE, S, HEUKEN, M
Published in Journal of electronic materials (01.11.1995)
Published in Journal of electronic materials (01.11.1995)
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Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxy
Gurskii, A.L., Vakarelska, K., Taudt, W., Wachtendorf, B., Söllner, J., Wahid, A., Heuken, M.
Published in Journal of crystal growth (01.01.1995)
Published in Journal of crystal growth (01.01.1995)
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AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors]
Woelk, E., Schmitz, D., Strauch, G., Wachtendorf, B., Jurgensen, H.
Published in Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society (1996)
Published in Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society (1996)
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Production of III-nitride films for LED and laser applications by multiwafer MOVPE
Beccard, R., Wachtendorf, B., Schon, O., Schmitz, D., Jurgensen, H., Woelk, E.
Published in Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting (1997)
Published in Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting (1997)
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A comparison of silicon and oxygen doping of GaN and optical and electrical properties of deposited layers
Niebuhr, R., Wachtendorf, B., Schmitz, D., Beccard, R., Jurgensen, H., Santic, B., Schlotter, P., Meier, M., Kaufmann, U., Bachem, K.H.
Published in 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application (1997)
Published in 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application (1997)
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Conference Proceeding