Trap‐Limited Vacancy Diffusion in Silicon at High Temperatures
Voronkov, Vladimir V.
Published in Physica status solidi. A, Applications and materials science (01.10.2019)
Published in Physica status solidi. A, Applications and materials science (01.10.2019)
Get full text
Journal Article
Impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in crystalline silicon
Helmich, Lailah, Walter, Dominic C., Falster, Robert, Voronkov, Vladimir V., Schmidt, Jan
Published in Solar energy materials and solar cells (01.10.2021)
Published in Solar energy materials and solar cells (01.10.2021)
Get full text
Journal Article
Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon
Schmidt, Jan, Bothe, Karsten, Voronkov, Vladimir V., Falster, Robert
Published in physica status solidi (b) (01.01.2020)
Published in physica status solidi (b) (01.01.2020)
Get full text
Journal Article
Minority carrier lifetime in indium doped silicon for photovoltaics
Murphy, John D., Pointon, Alex I., Grant, Nicholas E., Shah, Vishal A., Myronov, Maksym, Voronkov, Vladimir V., Falster, Robert J.
Published in Progress in photovoltaics (01.10.2019)
Published in Progress in photovoltaics (01.10.2019)
Get full text
Journal Article
Permanent deactivation of boron-oxygen recombination centres in silicon
Voronkov, Vladimir, Falster, Robert
Published in Physica Status Solidi. B: Basic Solid State Physics (01.09.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.09.2016)
Get full text
Journal Article
Impact of arsenic and phosphorus concentration on oxygen content in heavily doped silicon single crystal
Scala, Roberto, Porrini, Maria, Voronkov, Vladimir
Published in Journal of crystal growth (15.10.2020)
Published in Journal of crystal growth (15.10.2020)
Get full text
Journal Article