Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Vorontsov-Velyaminov, P. N., Sheremet, I. A., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
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Journal Article
On the laser lift-off of lightly doped micrometer-Thick w-GaN films from substrates via the absorption of IR radiation in sapphire
Voronenkov, V.V, Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Pinchuk, A.V, Zubrilov, A.S, Gorbunov, R.I, Latishev, F.E, Bochkareva, N.I, Lelikov, Y.S, Tarkhin, D.V, Smirnov, A.N, Davydov, V.Y, Sheremetc, I.A, Shreter, Y.G
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Journal Article
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates
Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Voronenkov, V.V, Rebane, Yu. T, Zubrilov, A.S, Gorbunov, R.I, Latyshev, P.E, Bochkareva, N.I, Lelikov, Yu. S, Tarhin, D.V, Smirnov, A.N, Davydov, V.Yu, Shreter, Yu. G
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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Journal Article
Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2012)
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Journal Article
Mechanism of the GaN LED efficiency falloff with increasing current
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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Journal Article
About a far-acting by using hardbody resonators
Bashkirov, M.M., Voronenkov, V.V., Konotop, A.A., Sergeev, V.I., Fedorova, Z.N., Chaplygin, A.A.
Published in 2008 International Conference on Actual Problems of Electron Devices Engineering (01.09.2008)
Published in 2008 International Conference on Actual Problems of Electron Devices Engineering (01.09.2008)
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