A low-barrier Schottky process using MoSi 2
Kapoor, A.K., Thomas, M.E., Vora, M.B.
Published in IEEE transactions on electron devices (01.06.1986)
Published in IEEE transactions on electron devices (01.06.1986)
Get full text
Journal Article
A low-barrier Schottky process using MoSi2
Kapoor, A.K., Thomas, M.E., Vora, M.B.
Published in IEEE transactions on electron devices (01.06.1986)
Published in IEEE transactions on electron devices (01.06.1986)
Get full text
Journal Article
BIFET - A high-performance, bipolar-MOSFET (NPN-nMOS) structure
Vora, M.B., Kroell, K., Hegedus, C.L.
Published in 1972 International Electron Devices Meeting (1972)
Published in 1972 International Electron Devices Meeting (1972)
Get full text
Conference Proceeding
Arsenic emitter high-performance transistor
Ghosh, H.N., Oberai, A.S., Vora, M.B., Chang, J.J., Joshi, M.L., Yeh, T.H.
Published in 1970 International Electron Devices Meeting (1970)
Published in 1970 International Electron Devices Meeting (1970)
Get full text
Conference Proceeding
Arsenic emitter for gold-doped shallow-junction transistors
Vora, M.B., Chang, J.J., Ghosh, H.N., Oberai, A.S., Yeh, T.H., Joshi, M.L.
Published in 1970 International Electron Devices Meeting (1970)
Published in 1970 International Electron Devices Meeting (1970)
Get full text
Conference Proceeding