Influence of the Ge profile on VBE and current gain mismatch in Advanced SiGe BICMOS NPN HBT with 200 GHz fT
Dahlstrom, M., Walter, K., Von Bruns, S., Malladi, R.M., Newton, Kim M., Joseph, A.J.
Published in 2006 Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2006)
Published in 2006 Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2006)
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Conference Proceeding
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT
Candra, P., Dahlstrom, M., Zierak, M., Voegeli, B., Watson, K., Gray, P., He, Z.X., Rassel, R.M., Von Bruns, S., Schmidt, N., Camillo-Castillo, R., Previty-Kelly, R., Gautsch, M., Norris, A., Gordon, M., Chapman, P., Hershberger, D., Lukaitis, J., Feilchenfeld, N., Joseph, A., St. Onge, S.A., Dunn, J.
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
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Conference Proceeding