Computational Simulation of a Field-Induced Charged Board Event Test Bench Using Transient Analysis
Chumpen, S., Pimpakun, S., Plong-ngooluam, S., Voldman, S.H., Sa-ngiamsak, C.
Published in IEEE access (01.01.2023)
Published in IEEE access (01.01.2023)
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Journal Article
Latchup in merged triple well structure
Voldman, S., Gebreselasie, E., Zierak, M., Hershberger, D., Collins, D., Feilchenfeld, N., St Onge, S., Dunn, J.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Conference Proceeding
The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology
Voldman, S., Lanzerotti, L., Morris, W., Rubin, L.
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
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Conference Proceeding
The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness
Voldman, S., Gebreselasie, E., Lanzerotti, L., Larsen, T., Feilchenfeld, N., St Onge, S., Joseph, A., Dunn, J.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Conference Proceeding
A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies
Voldman, S, Anderson, W, Ashton, R, Chaine, M, Duvvury, C, Maloney, T, Worley, E
Published in Microelectronics and reliability (01.03.2001)
Published in Microelectronics and reliability (01.03.2001)
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Journal Article
Dynamic threshold body- and gate-coupled SOI ESD protection networks
Voldman, S., Assaderaghi, F., Mandelman, J., Hsu, L., Shahidi, G.
Published in Journal of electrostatics (01.09.1998)
Published in Journal of electrostatics (01.09.1998)
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Journal Article
Transmission line pulse picosecond imaging circuit analysis methodology for evaluation of ESD and latchup
Weger, A., Voldman, S., Stellari, F., Peilin Song, Pia Sanda, McManus, M.
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
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Conference Proceeding
Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips
Voldman, S., Hui, D., Warriner, L., Young, D., Howard, J., Assaderaghi, F., Shahidi, G.
Published in Journal of electrostatics (01.08.2000)
Published in Journal of electrostatics (01.08.2000)
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Journal Article
Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry
Voldman, S., Hui, D., Young, D., Williams, R., Dreps, D., Howard, J., Sherony, M., Assaderaghi, F., Shahidi, G.
Published in Journal of electrostatics (2002)
Published in Journal of electrostatics (2002)
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Journal Article
Linewidth control effects on MOSFET ESD robustness
Voldman, S, Never, J, Holmes, S, Adkisson, J
Published in Microelectronics and reliability (01.01.1998)
Published in Microelectronics and reliability (01.01.1998)
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Journal Article
High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation
Ronan, B., Voldman, S., Lanzerotti, L., Rascoe, J., Sheridan, D., Rajendran, K.
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
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Conference Proceeding
The impact of MOSFET technology evolution and scaling on electrostatic discharge protection
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Book Review
Conference Proceeding
Journal Article
CMOS-on-SOI ESD protection networks
Voldman, S., Schulz, R., Howard, J., Gross, V., Wu, S., Yapsir, A., Sadana, D., Hovel, H., Walker, J., Assaderaghi, F., Chen, B., Sun, J.Y-C., Shahidi, G.
Published in Journal of electrostatics (1998)
Published in Journal of electrostatics (1998)
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Journal Article
The effects of gate field on the leakage characteristics of heavily doped junctions
Noble, W.P., Voldman, S.H., Bryant, A.
Published in IEEE transactions on electron devices (01.04.1989)
Published in IEEE transactions on electron devices (01.04.1989)
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Journal Article
ESD robustness of a BiCMOS SiGe technology
Voldman, S., Juliano, P., Schmidt, N., Botula, A., Johnson, R., Lanzerotti, L., Feilchenfeld, N., Joseph, J., Malinowski, J., Eld, E., Gross, V., Brennan, C., Dunn, J., Harame, D., Herman, D., Meyerson, B.
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)
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Conference Proceeding