Scanning tunneling potentiometry implemented into a multi-tip setup by software
Lüpke, F, Korte, S, Cherepanov, V, Voigtländer, B
Published in Review of scientific instruments (01.12.2015)
Published in Review of scientific instruments (01.12.2015)
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Journal Article
Scanning tunneling spectroscopy and manipulation of C60 on Cu(111)
Stróżecka, A., Mysliveček, J., Voigtländer, B.
Published in Applied physics. A, Materials science & processing (15.03.2007)
Published in Applied physics. A, Materials science & processing (15.03.2007)
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Journal Article
Dislocation networks in conventional and surfactant-mediated Ge/Si(1 1 1) epitaxy
Filimonov, S.N., Cherepanov, V., Paul, N., Asaoka, H., Brona, J., Voigtländer, B.
Published in Surface science (30.12.2005)
Published in Surface science (30.12.2005)
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Journal Article
On the microscopic origin of the kinetic step bunching instability on vicinal Si( [formula omitted])
Mysliveček, J, Schelling, C, Schäffler, F, Springholz, G, Šmilauer, P, Krug, J, Voigtländer, B
Published in Surface science (01.12.2002)
Published in Surface science (01.12.2002)
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Journal Article
Molecular beam epitaxy of silicon–germanium nanostructures
Pchelyakov, O.P, Bolkhovityanov, Yu.B, Dvurechenskii, A.V, Nikiforov, A.I, Yakimov, A.I, Voigtländer, B
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Journal Article
Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
Pchelyakov, O. P., Bolkhovityanov, Yu. B., Dvurechenskii, A. V., Sokolov, L. V., Nikiforov, A. I., Yakimov, A. I., Voigtländer, B.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Journal Article
Formation of Si/Ge nanostructures at surfaces by self-organization
Voigtländer, Bert, Kawamura, Midori, Paul, Neelima, Cherepanov, Vasily
Published in Journal of physics. Condensed matter (05.05.2004)
Published in Journal of physics. Condensed matter (05.05.2004)
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Journal Article
On the origin of the kinetic growth instability of homoepitaxy on Si(001)
Mysliveček, J., Schelling, C., Springholz, G., Schäffler, F., Voigtländer, B., Šmilauer, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Journal Article
Conference Proceeding
Strain-induced surface structures on Sb-covered Ge(111): Epitaxial Ge films on Si(111):Sb
Antons, A, Cao, Y, Voigtländer, B, Schroeder, K, Berger, R, Blügel, S
Published in Europhysics letters (01.05.2003)
Published in Europhysics letters (01.05.2003)
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Journal Article
Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111)
Antons, A, Schroeder, K, Voigtländer, B, Cherepanov, V, Berger, R, Blügel, S
Published in Physical review letters (02.12.2002)
Published in Physical review letters (02.12.2002)
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Journal Article
Ohmic contacts for GaAs based nanocolumns
Wensorra, J., Lepsa, M. I., Indlekofer, K. M., Förster, A., Jaschinsky, P., Voigtländer, B., Pirug, G., Lüth, H.
Published in Physica status solidi. A, Applications and materials science (01.11.2006)
Published in Physica status solidi. A, Applications and materials science (01.11.2006)
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Journal Article
In vivo STM studies of the growth of Germanium and Silicon on Silicon
VOIGTLÄNDER, B, KÄSTNER, M
Published in Applied physics. A, Materials science & processing (01.12.1996)
Published in Applied physics. A, Materials science & processing (01.12.1996)
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