Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
Chen, Zequan, Uren, Michael J., Huang, Peng, Sanyal, Indraneel, Smith, Matthew D., Vohra, Anurag, Kumar, Sujit, Decoutere, Stefaan, Bakeroot, Benoit, Kuball, Martin
Published in Applied physics letters (26.08.2024)
Published in Applied physics letters (26.08.2024)
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Journal Article
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan
Published in Scientific reports (23.09.2023)
Published in Scientific reports (23.09.2023)
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Journal Article
Epitaxial GeSn: impact of process conditions on material quality
Loo, Roger, Shimura, Yosuke, Ike, Shinichi, Vohra, Anurag, Stoica, Toma, Stange, Daniela, Buca, Dan, Kohen, David, Margetis, Joe, Tolle, John
Published in Semiconductor science and technology (16.10.2018)
Published in Semiconductor science and technology (16.10.2018)
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Journal Article
Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors
Schulte-Braucks, Christian, Pandey, Rahul, Sajjad, Redwan Noor, Barth, Mike, Ghosh, Ram Krishna, Grisafe, Ben, Sharma, Pankaj, von den Driesch, Nils, Vohra, Anurag, Rayner, Gilbert Bruce, Loo, Roger, Mantl, Siegfried, Buca, Dan, Chih-Chieh Yeh, Cheng-Hsien Wu, Tsai, Wilman, Antoniadis, Dimitri A., Datta, Suman
Published in IEEE transactions on electron devices (01.10.2017)
Published in IEEE transactions on electron devices (01.10.2017)
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Journal Article
(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
Porret, Clement, Hikavyy, Andriy Yakovitch, Gomez Granados, Juan Fernando, Baudot, Sylvain, Vohra, Anurag, Kunert, Bernardette, Douhard, Bastien, Bogdanowicz, Janusz, Schaekers, Marc, Kohen, David, Margetis, Joe, Tolle, John, Lima, Lucas, Sammak, Amir, Scappucci, Giordano, Rosseel, Erik, Langer, Robert, Loo, Roger
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
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Journal Article
Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering
Borga, Matteo, Posthuma, Niels, Vohra, Anurag, Bakeroot, Benoit, Decoutere, Stefaan
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
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Journal Article
A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology
Chatterjee, Urmimala, Pauw, Herbert De, Syshchyk, Olga, Cosnier, Thibault, Vohra, Anurag, Decoutere, Stefaan
Published in Solid-state electronics (01.09.2023)
Published in Solid-state electronics (01.09.2023)
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Journal Article
Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors
Banerjee, Sourish, Peralagu, Uthayasankaran, Alian, Alireza, Zhao, Ming, Hahn, Herwig, Minj, Albert, Vanhove, Benjamin, Vohra, Anurag, Parvais, Bertrand, Langer, Robert, Collaert, Nadine
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
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Journal Article
Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
Kohen, David, Vohra, Anurag, Loo, Roger, Vandervorst, Wilfried, Bhargava, Nupur, Margetis, Joe, Tolle, John
Published in Journal of crystal growth (01.02.2018)
Published in Journal of crystal growth (01.02.2018)
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Journal Article
Enhanced B doping in CVD-grown GeSn:B using B d-doping layers
Kohen, David, Vohra, Anurag, Loo, Roger, Vandervorst, Wilfried, Bhargava, Nupur, Margetis, Joe, Tolle, John
Published in Journal of crystal growth (01.02.2018)
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Published in Journal of crystal growth (01.02.2018)
Journal Article
Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices
Porret, Clement, Vohra, Anurag, Nakazaki, Nobuya, Hikavyy, Andriy, Douhard, Bastien, Meersschaut, Johan, Bogdanowicz, Janusz, Rosseel, Erik, Pourtois, Geoffrey, Langer, Robert, Loo, Roger
Published in Physica status solidi. A, Applications and materials science (01.02.2020)
Published in Physica status solidi. A, Applications and materials science (01.02.2020)
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Journal Article
Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy
Margetis, Joe, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Al-Kabi, Sattar, Dou, Wei, Du, Wei, Bhargava, Nupur, Yu, Shui-Qing, Profijt, Harald, Kohen, David, Loo, Roger, Vohra, Anurag, Tolle, John
Published in Materials science in semiconductor processing (01.11.2017)
Published in Materials science in semiconductor processing (01.11.2017)
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Journal Article
Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx
Vohra, Anurag, Makkonen, Ilja, Pourtois, Geoffrey, Slotte, Jonatan, Porret, Clement, Rosseel, Erik, Khanam, Afrina, Tirrito, Matteo, Douhard, Bastien, Loo, Roger, Vandervorst, Wilfried
Published in ECS journal of solid state science and technology (07.05.2020)
Published in ECS journal of solid state science and technology (07.05.2020)
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Journal Article
A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks
Hikavyy, Andriy, Porret, Clement, Vohra, Anurag, Douhard, Bastien, Loo, Roger, Sebaai, Farid
Published in Solid state phenomena (01.08.2018)
Published in Solid state phenomena (01.08.2018)
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Journal Article
Source/Drain Materials for Ge nMOS Devices
Vohra, Anurag, Porret, Clement, Rosseel, Erik, Hikavyy, Andriy Yakovitch, Capogreco, Elena, Horiguchi, Naoto, Loo, Roger, Vandervorst, Wilfried
Published in ECS transactions (22.10.2019)
Published in ECS transactions (22.10.2019)
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Journal Article
Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga, Cosnier, Thibault, Huang, Zheng-Hong, Cingu, Deepthi, Wellekens, Dirk, Vohra, Anurag, Geens, Karen, Vudumula, Pavan, Chatterjee, Urmimala, Decoutere, Stefaan, Wu, Tian-Li, Bakeroot, Benoit
Published in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (19.09.2022)
Published in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (19.09.2022)
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