Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Vorontsov-Velyaminov, P. N., Sheremet, I. A., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Hydride vapor phase epitaxy system for bulk gan layers deposition
Voronenkov, V. V., Bochkareva, N. I., Virko, M. V.
Published in NAUCHNOE PRIBOROSTROENIE (28.12.2018)
Published in NAUCHNOE PRIBOROSTROENIE (28.12.2018)
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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs
Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Kogotkov, V. S., Rebane, Yu. T., Virko, M. V., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2015)
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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N., Davydov, V. Yu, Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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