Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
Orlov, L.K., Ivina, N.L., Potapov, A.V., Smyslova, T.N., Vinogradsky, L.M., Horvath, Z.J.
Published in Microelectronics (01.03.2005)
Published in Microelectronics (01.03.2005)
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