A CMOS silicon spin qubit
Maurand, R, Jehl, X, Kotekar-Patil, D, Corna, A, Bohuslavskyi, H, Laviéville, R, Hutin, L, Barraud, S, Vinet, M, Sanquer, M, De Franceschi, S
Published in Nature communications (24.11.2016)
Published in Nature communications (24.11.2016)
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Journal Article
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
Crippa, A, Ezzouch, R, Aprá, A, Amisse, A, Laviéville, R, Hutin, L, Bertrand, B, Vinet, M, Urdampilleta, M, Meunier, T, Sanquer, M, Jehl, X, Maurand, R, De Franceschi, S
Published in Nature communications (03.07.2019)
Published in Nature communications (03.07.2019)
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Journal Article
Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification
Schaal, S, Ahmed, I, Haigh, J A, Hutin, L, Bertrand, B, Barraud, S, Vinet, M, Lee, C-M, Stelmashenko, N, Robinson, J W A, Qiu, J Y, Hacohen-Gourgy, S, Siddiqi, I, Gonzalez-Zalba, M F, Morton, J J L
Published in Physical review letters (14.02.2020)
Published in Physical review letters (14.02.2020)
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Journal Article
Electrical Control of g‑Factor in a Few-Hole Silicon Nanowire MOSFET
Voisin, B, Maurand, R, Barraud, S, Vinet, M, Jehl, X, Sanquer, M, Renard, J, De Franceschi, S
Published in Nano letters (13.01.2016)
Published in Nano letters (13.01.2016)
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Journal Article
Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
Betz, A. C, Wacquez, R, Vinet, M, Jehl, X, Saraiva, A. L, Sanquer, M, Ferguson, A. J, Gonzalez-Zalba, M. F
Published in Nano letters (08.07.2015)
Published in Nano letters (08.07.2015)
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Journal Article
Single-donor ionization energies in a nanoscale CMOS channel
Sanquer, M, Pierre, M, Wacquez, R, Jehl, X, Vinet, M, Cueto, O
Published in Nature nanotechnology (01.02.2010)
Published in Nature nanotechnology (01.02.2010)
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Journal Article
Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K
Triantopoulos, K., Casse, M., Barraud, S., Haendler, S., Vincent, E., Vinet, M., Gaillard, F., Ghibaudo, G.
Published in IEEE transactions on electron devices (01.08.2019)
Published in IEEE transactions on electron devices (01.08.2019)
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Journal Article
A single hole spin with enhanced coherence in natural silicon
Piot, N., Brun, B., Schmitt, V., Zihlmann, S., Michal, V. P., Apra, A., Abadillo-Uriel, J. C., Jehl, X., Bertrand, B., Niebojewski, H., Hutin, L., Vinet, M., Urdampilleta, M., Meunier, T., Niquet, Y.-M., Maurand, R., Franceschi, S. De
Published in Nature nanotechnology (01.10.2022)
Published in Nature nanotechnology (01.10.2022)
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Journal Article
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
Bohuslavskyi, H., Jansen, A. G. M., Barraud, S., Barral, V., Casse, M., Le Guevel, L., Jehl, X., Hutin, L., Bertrand, B., Billiot, G., Pillonnet, G., Arnaud, F., Galy, P., De Franceschi, S., Vinet, M., Sanquer, M.
Published in IEEE electron device letters (01.05.2019)
Published in IEEE electron device letters (01.05.2019)
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Journal Article
Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry
Dupont-Ferrier, E, Roche, B, Voisin, B, Jehl, X, Wacquez, R, Vinet, M, Sanquer, M, De Franceschi, S
Published in Physical review letters (25.03.2013)
Published in Physical review letters (25.03.2013)
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Journal Article
Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box
Oakes, G. A., Ciriano-Tejel, V. N., Wise, D. F., Fogarty, M. A., Lundberg, T., Lainé, C., Schaal, S., Martins, F., Ibberson, D. J., Hutin, L., Bertrand, B., Stelmashenko, N., Robinson, J. W. A., Ibberson, L., Hashim, A., Siddiqi, I., Lee, A., Vinet, M., Smith, C. G., Morton, J. J. L., Gonzalez-Zalba, M. F.
Published in Physical review. X (01.01.2023)
Published in Physical review. X (01.01.2023)
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Journal Article
A two-atom electron pump
Roche, B, Riwar, R-P, Voisin, B, Dupont-Ferrier, E, Wacquez, R, Vinet, M, Sanquer, M, Splettstoesser, J, Jehl, X
Published in Nature communications (2013)
Published in Nature communications (2013)
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Journal Article
A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration
Fenouillet-Beranger, C., Brunet, L., Batude, P., Brevard, L., Garros, X., Casse, M., Lacord, J., Sklenard, B., Acosta-Alba, P., Kerdiles, S., Tavernier, A., Vizioz, C., Besson, P., Gassilloud, R., Pedini, J.-M., Kanyandekwe, J., Mazen, F., Magalhaes-Lucas, A., Cavalcante, C., Bosch, D., Ribotta, M., Lapras, V., Vinet, M., Andrieu, F., Arcamone, J.
Published in IEEE transactions on electron devices (01.07.2021)
Published in IEEE transactions on electron devices (01.07.2021)
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Journal Article
Experimental Demonstration of Ω-Gate SOI Nanowire MOS Transistors' Mobility Variation Induced by Substrate Bias
Bergamaschi, F. E., Ribeiro, T. A., Paz, B. C., de Souza, M., Barraud, S., Casse, M., Vinet, M., Faynot, O., Pavanello, M. A.
Published in IEEE transactions on electron devices (01.07.2022)
Published in IEEE transactions on electron devices (01.07.2022)
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Journal Article
Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance
Casse, M., Paz, B. Cardoso, Ghibaudo, G., Poiroux, T., Barraud, S., Vinet, M., de Franceschi, S., Meunier, T., Gaillard, F.
Published in IEEE transactions on electron devices (01.11.2020)
Published in IEEE transactions on electron devices (01.11.2020)
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Journal Article
Multiscale statistically correlated variability: A unified model for computer-aided design
Poiroux, T., Scheer, P., Juge, A., Vinet, M.
Published in IEEE transactions on electron devices (01.11.2015)
Published in IEEE transactions on electron devices (01.11.2015)
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Journal Article
Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization
Bohuslavskyi, H., Barraud, S., Barral, V., Casse, M., Le Guevel, L., Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., De Franceschi, S., Sanquer, M., Vinet, M.
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
Hybrid Metal-Semiconductor Electron Pump for Quantum Metrology
Jehl, X., Voisin, B., Charron, T., Clapera, P., Ray, S., Roche, B., Sanquer, M., Djordjevic, S., Devoille, L., Wacquez, R., Vinet, M.
Published in Physical review. X (01.05.2013)
Published in Physical review. X (01.05.2013)
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Journal Article
Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect Transistors
Riffaud, J., Gaillardin, M., Marcandella, C., Martinez, M., Paillet, P., Duhamel, O., Lagutere, T., Raine, M., Richard, N., Andrieu, F., Barraud, S., Vinet, M., Faynot, O.
Published in IEEE transactions on nuclear science (01.01.2018)
Published in IEEE transactions on nuclear science (01.01.2018)
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Journal Article
Pauli spin blockade in CMOS double quantum dot devices
Kotekar‐Patil, D., Corna, A., Maurand, R., Crippa, A., Orlov, A., Barraud, S., Hutin, L., Vinet, M., Jehl, X., De Franceschi, S., Sanquer, M.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.03.2017)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.03.2017)
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