Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy
Villarreal-Faz, M., Meza-Reyes, P. G., Belio-Manzano, A., Hernández-Gaytán, L. M., Mercado-Ornelas, C. A., Perea-Parrales, F. E., Olvera-Enríquez, J. P., Espinosa-Vega, L. I., Rodríguez, A. G., Yee-Rendón, C. M., Méndez-García, V. H., Cortes-Mestizo, I. E.
Published in Journal of materials science. Materials in electronics (01.03.2023)
Published in Journal of materials science. Materials in electronics (01.03.2023)
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