Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT
Viey, A.G., Vandendaele, W., Jaud, M.-A., Coignus, J., Cluzel, J., Krakovinsky, A., Martin, S., Biscarrat, J., Gwoziecki, R., Sousa, V., Gaillard, F., Modica, R., Iucolano, F., Meneghini, M., Meneghesso, G., Ghibaudo, G.
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
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Conference Proceeding
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT
Viey, A.G., Vandendaele, W., Jaud, M.-A., Cluzel, J., Barnes, J.-P., Martin, S., Krakovinsky, A., Gwoziecki, R., Plissonnier, M., Gaillard, F., Modica, R., Iucolano, F., Meneghini, M., Zanoni, E., Meneghesso, G., Ghibaudo, G.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage
Leurquin, C., Vandendaele, W., Viey, A.G, Gwoziecki, R., Escoffier, R., Salot, R., Despesse, G., Iucolano, F., Modica, R., Constant, A.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT
Viey, A.G., Vandendaele, W., Jaud, MA, Gwoziecki, R., Torres, A., Plissonnier, M., Gaillard, F., Ghibaudo, G., Modica, R., Iucolano, F., Meneghini, M., Meneghesso, G.
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
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Conference Proceeding