Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.
Published in Journal of applied physics (14.01.2015)
Published in Journal of applied physics (14.01.2015)
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Journal Article
High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate
Arulkumaran, S., Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Journal Article
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., Ranjan, K.
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
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Journal Article
Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation
Vicknesh, S., Arulkumaran, S., Ng, G. I.
Published in 2012 IEEE/MTT-S International Microwave Symposium Digest (01.06.2012)
Published in 2012 IEEE/MTT-S International Microwave Symposium Digest (01.06.2012)
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Conference Proceeding
Temperature-Dependent Microwave Noise Characteristics in ALD Al2O3/AlGaN/GaN MISHEMTs on Silicon Substrate
LIU, Z. H, NG, G. I, ARULKUMARAN, S, MAUNG, Y. K. T, TEO, K. L, FOO, S. C, VICKNESH, S
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Temperature-Dependent Microwave Noise Characteristics in ALD \hbox\hbox/AlGaN/GaN MISHEMTs on Silicon Substrate
Liu, Z H, Ng, G I, Arulkumaran, S, Maung, Y K T, Teo, K L, Foo, S C, Vicknesh, S
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Si layer transfer to InP substrate using low-temperature wafer bonding
Arokiaraj, J., Tripathy, S., Vicknesh, S., Chua, S.J.
Published in Applied surface science (30.11.2006)
Published in Applied surface science (30.11.2006)
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Journal Article
Design, modeling, and mechanical characterizations of micromachined InP-based actuator for tunable MOEMS applications
Ongkodjojo, Andojo, Tay, Francis E. H., Ashok, S. M., Vicknesh, S., Akkipeddi, R.
Published in Microsystem technologies : sensors, actuators, systems integration (01.03.2008)
Published in Microsystem technologies : sensors, actuators, systems integration (01.03.2008)
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Journal Article
GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates
Tripathy, S., Vicknesh, S., Wang, L. S., Lin, V. K. X., Oh, S. A., Grover, R., Zang, K. Y., Arokiaraj, J., Tan, J. N., Kumar, B., Gong, H., Shannigrahi, S. R., Ramam, A., Chua, S. J.
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
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Journal Article
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al 2 O 3 dielectric gate stack
Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., Ranjan, K.
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
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Journal Article
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al sub(2)O sub(3) dielectric gate stack
Anand, MJ, Ng, GI, Vicknesh, S, Arulkumaran, S, Ranjan, K
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
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Journal Article
Probing Interface Structure of Low-Temperature-Bonded InP on Si
Arokiaraj, J., Tripathy, S., Vicknesh, S., Ramam, A.
Published in Electrochemical and solid-state letters (01.01.2005)
Published in Electrochemical and solid-state letters (01.01.2005)
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Journal Article