Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
Chabak, K.D., Gillespie, J.K., Miller, V., Crespo, A., Roussos, J., Trejo, M., Walker, D.E., Via, G.D., Jessen, G.H., Wasserbauer, J., Faili, F., Babic, D.I., Francis, D., Ejeckam, F.
Published in IEEE electron device letters (01.02.2010)
Published in IEEE electron device letters (01.02.2010)
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Journal Article
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
Douglas, E.A., Chang, C.Y., Cheney, D.J., Gila, B.P., Lo, C.F., Lu, Liu, Holzworth, R., Whiting, P., Jones, K., Via, G.D., Kim, Jinhyung, Jang, Soohwan, Ren, Fan, Pearton, S.J.
Published in Microelectronics and reliability (01.02.2011)
Published in Microelectronics and reliability (01.02.2011)
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Journal Article
Conference Proceeding
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.
Published in Solid-state electronics (01.02.2013)
Published in Solid-state electronics (01.02.2013)
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Journal Article
RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz
Jessen, G.H., Gillespie, J.K., Via, G.D., Crespo, A., Langley, D., Aumer, M.E., Ward, C.S., Henry, H.G., Thomson, D.B., Partlow, D.P.
Published in IEEE electron device letters (01.05.2007)
Published in IEEE electron device letters (01.05.2007)
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Journal Article
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Journal Article
High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.
Published in Solid-state electronics (01.02.2013)
Published in Solid-state electronics (01.02.2013)
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Journal Article
Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation
Poling, B.S., Via, G.D., Bole, K.D., Johnson, E.E., McDermott, J.M.
Published in Microelectronics and reliability (01.01.2017)
Published in Microelectronics and reliability (01.01.2017)
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Journal Article
Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN
Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.
Published in Microelectronics and reliability (01.01.2016)
Published in Microelectronics and reliability (01.01.2016)
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Journal Article
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
Crespo, A., Bellot, M.M., Chabak, K.D., Gillespie, J.K., Jessen, G.H., Miller, V., Trejo, M., Via, G.D., Walker, D.E., Winningham, B.W., Smith, H.E., Cooper, T.A., Gao, X., Guo, S.
Published in IEEE electron device letters (01.01.2010)
Published in IEEE electron device letters (01.01.2010)
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Journal Article
Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps
Sasikumar, A., Arehart, A.R., Via, G.D., Winningham, B., Poling, B., Heller, E., Ringel, S.A.
Published in Microelectronics and reliability (01.11.2015)
Published in Microelectronics and reliability (01.11.2015)
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Journal Article
Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN
Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.
Published in Microelectronics and reliability (01.01.2016)
Published in Microelectronics and reliability (01.01.2016)
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Journal Article
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors
Douglas, E.A., Chang, C.Y., Gila, B.P., Holzworth, M.R., Jones, K.S., Liu, L., Kim, Jinhyung, Jang, Soohwan, Via, G.D., Ren, F., Pearton, S.J.
Published in Microelectronics and reliability (2012)
Published in Microelectronics and reliability (2012)
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Journal Article
Conference Proceeding
Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R, Gila, B.P, Onstine, A.H, Pearton, S.J, Kim, Ji-Hyun, Luo, B, Mehandru, R, Ren, F, Gillespie, J.K, Fitch, R.C, Seweel, J, Dettmer, R, Via, G.D, Crespo, A, Jenkins, T.J, Irokawa, Y
Published in Journal of semiconductor technology and science (2003)
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Published in Journal of semiconductor technology and science (2003)
Journal Article
AlGaN/GaN HEMT on Diamond Technology Demonstration
Jessen, G.H., Gillespie, J.K., Via, G.D., Crespo, A., Langley, D., Wasserbauer, J., Faili, F., Francis, D., Babic, D., Ejeckam, F., Guo, S., Eliashevich, I.
Published in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium (01.11.2006)
Published in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium (01.11.2006)
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Conference Proceeding
High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
High performance 0.14 [micro]m gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H, Fitch, R.C, Gillespie, J.K, Via, G.D, Moser, N.A, Yannuzzi, M.J, Crespo, A, Sewell, J.S, Dettmer, R.W, Jenkins, T.J, Davis, R.F, Yang, J, Khan, M.A, Binari, S.C
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.
Published in Solid-state electronics (01.06.2003)
Published in Solid-state electronics (01.06.2003)
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Journal Article
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.
Published in Solid-state electronics (01.10.2003)
Published in Solid-state electronics (01.10.2003)
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Journal Article
Effects of Sc 2 O 3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Journal Article