Intentional polarity conversion of AlN epitaxial layers by oxygen
Stolyarchuk, N, Markurt, T, Courville, A, March, K, Zúñiga-Pérez, J, Vennéguès, P, Albrecht, M
Published in Scientific reports (20.09.2018)
Published in Scientific reports (20.09.2018)
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Journal Article
Silicon diffusion in AlN
Bonito Oliva, V., Mangelinck, D., Hagedorn, S., Bracht, H., Irmscher, K., Hartmann, C., Vennéguès, P., Albrecht, M.
Published in Journal of applied physics (07.09.2023)
Published in Journal of applied physics (07.09.2023)
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Journal Article
Microstructure of epitaxial Mg3N2 thin films grown by MBE
John, P., Vennéguès, P., Rotella, H., Deparis, C., Lichtensteiger, C., Zúñiga-Pérez, J.
Published in Journal of applied physics (07.03.2021)
Published in Journal of applied physics (07.03.2021)
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Journal Article
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
Damilano, B., Aristégui, R., Teisseyre, H., Vézian, S., Guigoz, V., Courville, A., Florea, I., Vennéguès, P., Bockowski, M., Guillet, T., Vladimirova, M.
Published in Journal of applied physics (07.03.2024)
Published in Journal of applied physics (07.03.2024)
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Journal Article
Fiber‐draw‐induced elongation and break‐up of particles inside the core of a silica‐based optical fiber
Vermillac, M., Lupi, J.‐F., Peters, F., Cabié, M., Vennéguès, P., Kucera, C., Neisius, T., Ballato, J., Blanc, W.
Published in Journal of the American Ceramic Society (01.05.2017)
Published in Journal of the American Ceramic Society (01.05.2017)
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Journal Article
Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
Matta, S., Brault, J., Ngo, T. H., Damilano, B., Korytov, M., Vennéguès, P., Nemoz, M., Massies, J., Leroux, M., Gil, B.
Published in Journal of applied physics (28.08.2017)
Published in Journal of applied physics (28.08.2017)
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Journal Article
Proposition of a model elucidating the AlN-on-Si (111) microstructure
Mante, N., Rennesson, S., Frayssinet, E., Largeau, L., Semond, F., Rouvière, J. L., Feuillet, G., Vennéguès, P.
Published in Journal of applied physics (07.06.2018)
Published in Journal of applied physics (07.06.2018)
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Journal Article
Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties
Coulon, P. M., Mexis, M., Teisseire, M., Jublot, M., Vennéguès, P., Leroux, M., Zuniga-Perez, J.
Published in Journal of applied physics (21.04.2014)
Published in Journal of applied physics (21.04.2014)
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Journal Article
Al5+αSi5+δN12, a new Nitride compound
Dagher, R, Lymperakis, L, Delaye, V, Largeau, L, Michon, A, Brault, J, Vennéguès, P
Published in Scientific reports (04.11.2019)
Published in Scientific reports (04.11.2019)
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Journal Article
UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range
Brault, J, Khalfioui, M Al, Matta, S, Damilano, B, Leroux, M, Chenot, S, Korytov, M, Nkeck, J E, Vennéguès, P, Duboz, J-Y, Massies, J, Gil, B
Published in Semiconductor science and technology (04.06.2018)
Published in Semiconductor science and technology (04.06.2018)
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Journal Article
Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy
Kriouche, N., Vennéguès, P., Nemoz, M., Nataf, G., De Mierry, P.
Published in Journal of crystal growth (15.09.2010)
Published in Journal of crystal growth (15.09.2010)
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Journal Article
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
Vennéguès, P., Chauveau, J. M., Bougrioua, Z., Zhu, T., Martin, D., Grandjean, N.
Published in Journal of applied physics (01.12.2012)
Published in Journal of applied physics (01.12.2012)
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Journal Article
On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition
Vermillac, M., Fneich, H., Turlier, J., Cabié, M., Kucera, C., Borschneck, D., Peters, F., Vennéguès, P., Neisius, T., Chaussedent, S., Neuville, D.R., Mehdi, A., Ballato, J., Blanc, W.
Published in Optical materials (01.01.2019)
Published in Optical materials (01.01.2019)
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Journal Article
Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy
Nguyen, X. S., Hou, H. W., De Mierry, P., Vennéguès, P., Tendille, F., Arehart, A. R., Ringel, S. A., Fitzgerald, E. A., Chua, S. J.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.11.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.11.2016)
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Journal Article
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy
Xia, Y., Brault, J., Vennéguès, P., Nemoz, M., Teisseire, M., Leroux, M., Chauveau, J.-M.
Published in Journal of crystal growth (15.02.2014)
Published in Journal of crystal growth (15.02.2014)
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Journal Article
Interface structure and anisotropic strain relaxation of nonpolar wurtzite ( 11 2 ¯ 0 ) and ( 10 1 ¯ 0 ) orientations: ZnO epilayers grown on sapphire
Chauveau, J.-M., Vennéguès, P., Laügt, M., Deparis, C., Zuniga-Perez, J., Morhain, C.
Published in Journal of applied physics (01.10.2008)
Published in Journal of applied physics (01.10.2008)
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Journal Article
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
Baron, N., Cordier, Y., Chenot, S., Vennéguès, P., Tottereau, O., Leroux, M., Semond, F., Massies, J.
Published in Journal of applied physics (01.02.2009)
Published in Journal of applied physics (01.02.2009)
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