Importance of building orientation in determining daylighting quality in student dorm rooms: Physical and simulated daylighting parameters’ values compared to subjective survey results
JOVANOVIC, A, PEJIC, P, DJORIC-VELJKOVIC, S, KARAMARKOVIC, J, DJELIC, M
Published in Energy and buildings (01.07.2014)
Published in Energy and buildings (01.07.2014)
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What is the preferred geometry of sulfur-disulfide interactions?
Veljkovi, Ivana S, Veljkovi, Dušan, Sari, Gordana G, Stankovi, Ivana M, Zari, Sne ana D
Published in CrystEngComm (21.11.2020)
Published in CrystEngComm (21.11.2020)
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NBTI and irradiation related degradation mechanisms in power VDMOS transistors
Stojadinović, N., Djorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I., Danković, D.
Published in Microelectronics and reliability (01.09.2018)
Published in Microelectronics and reliability (01.09.2018)
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A review of pulsed NBTI in P-channel power VDMOSFETs
Danković, D., Manić, I., Prijić, A., Davidović, V., Prijić, Z., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stojadinović, N.
Published in Microelectronics and reliability (01.03.2018)
Published in Microelectronics and reliability (01.03.2018)
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Journal Article
NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions
MANIC, I, DANKOVIC, D, PRIJIC, A, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, PRIJIC, Z, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2011)
Published in Microelectronics and reliability (01.09.2011)
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Conference Proceeding
Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
Danković, D., Davidović, V., Golubović, S., Veljković, S., Mitrović, N., Djorić-Veljković, S.
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
Negative bias temperature instability in n-channel power VDMOSFETs
Danković, D., Manić, I., Davidović, V., Djorić-Veljković, S., Golubović, S., Stojadinović, N.
Published in Microelectronics and reliability (01.08.2008)
Published in Microelectronics and reliability (01.08.2008)
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Conference Proceeding
Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications
Mitrović, N., Veljković, S., Davidović, V., Djorić-Veljković, S., Golubović, S., Živanović, E., Prijić, Z., Danković, D.
Published in Microelectronics and reliability (01.11.2022)
Published in Microelectronics and reliability (01.11.2022)
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Journal Article
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress
STOJADINOVIC, N, DANKOVIC, D, MANIC, I, PRIJIC, A, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, PRIJIC, Z
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Conference Proceeding
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs
MANIC, I, DANKOVIC, D, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, GOLUBOVIC, S, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Journal Article
Conference Proceeding
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs
DANKOVIC, D, MANIC, I, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, GOLUBOVIC, S, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Conference Proceeding
Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs
DANKOVIC, D, MANIC, I, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Conference Proceeding
Self-heating of stressed VDMOS devices under specific operating conditions
Veljković, S., Mitrović, N., Jovanović, I., Živanović, E., Paskaleva, A., Spassov, D., Mančić, D., Danković, D.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article
Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs
MANIC, I, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, DANKOVIC, D, GOLUBOVIC, S, STOJADINOVIC, N
Published in IET circuits, devices & systems (01.04.2008)
Published in IET circuits, devices & systems (01.04.2008)
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