Cr-related energy levels and mechanism of Cr2+ ion photorecharge in ZnS:Cr
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Mukhlyo, M. O., Veligura, L. I.
Published in Physica Status Solidi (b) (01.11.2008)
Published in Physica Status Solidi (b) (01.11.2008)
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Journal Article
Effects of photoassisted deposition and/or photoassisted annealing on characteristics of ZnS:Mn thin-film electroluminescent devices
Vlasenko, N.A., Denisova, Z.L., Kononets, Ya.F., Kopytko, Yu.V., Veligura, L.I., Vdovenkov, A.A.
Published in Journal of crystal growth (01.10.2003)
Published in Journal of crystal growth (01.10.2003)
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Journal Article
On nature of centers responsible for inherent memory in ZnS : Mn thin-film electroluminescent devices
Vlasenko, N.A, Chumachkova, M.M, Denisova, Z.L, Veligura, L.I
Published in Journal of crystal growth (15.06.2000)
Published in Journal of crystal growth (15.06.2000)
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Journal Article
Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films
Kononets, Ya. F., Veligura, L. I., Ostroukhova, O. A.
Published in Semiconductors (Woodbury, N.Y.) (01.05.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.05.1998)
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Journal Article
Effect of erbium fluoride doping on the photoluminescence of SiOx films
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
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Journal Article
Cr‐related energy levels and mechanism of Cr 2+ ion photorecharge in ZnS:Cr
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Mukhlyo, M. O., Veligura, L. I.
Published in physica status solidi (b) (01.11.2008)
Published in physica status solidi (b) (01.11.2008)
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Journal Article
Effect of erbium fluoride doping on the photoluminescence of SiO x films
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
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Journal Article
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO{sub x} Films after Low-Temperature Annealing
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (15.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (15.11.2011)
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Journal Article
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiOx Films after Low-Temperature Annealing
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
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Journal Article
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
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Journal Article
Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO{sub x} Films'
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (15.06.2011)
Published in Semiconductors (Woodbury, N.Y.) (15.06.2011)
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Journal Article
Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
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Journal Article
Electronic states on silicon surface after deposition and annealing of SiO{sub x} films
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (15.05.2011)
Published in Semiconductors (Woodbury, N.Y.) (15.05.2011)
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Journal Article
Electronic states on silicon surface after deposition and annealing of SiO x films
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2011)
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Journal Article
Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiOx Films”
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (2011)
Published in Semiconductors (Woodbury, N.Y.) (2011)
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Journal Article