Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature
Hopf, T., Vassilevski, K. V., Escobedo-Cousin, E., King, P. J., Wright, N. G., O'Neill, A. G., Horsfall, A. B., Goss, J. P., Wells, G. H., Hunt, M. R. C.
Published in Journal of applied physics (21.10.2014)
Published in Journal of applied physics (21.10.2014)
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Journal Article
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
Vassilevski, K V, Wright, N G, Nikitina, I P, Horsfall, A B, O'Neill, A G, Uren, M J, Hilton, K P, Masterton, A G, Hydes, A J, Johnson, C M
Published in Semiconductor science and technology (01.03.2005)
Published in Semiconductor science and technology (01.03.2005)
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Journal Article
Device processing and characterisation of high temperature silicon carbide Schottky diodes
Vassilevski, K.V., Nikitina, I.P., Wright, N.G., Horsfall, A.B., O’Neill, A.G., Johnson, C.M.
Published in Microelectronic engineering (2006)
Published in Microelectronic engineering (2006)
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Journal Article
Conference Proceeding
Structural pattern formation in titanium–nickel contacts on silicon carbide following high-temperature annealing
Nikitina, I P, Vassilevski, K V, Horsfall, A B, Wright, N G, O'Neill, A G, Johnson, C M, Yamamoto, T, Malhan, R K
Published in Semiconductor science and technology (01.07.2006)
Published in Semiconductor science and technology (01.07.2006)
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Journal Article
Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes
Blasciuc-Dimitriu, C, Horsfall, A B, Wright, N G, Johnson, C M, Vassilevski, K V, O'Neill, A G
Published in Semiconductor science and technology (01.01.2005)
Published in Semiconductor science and technology (01.01.2005)
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Journal Article
Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation
Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O’Neill, A.G.
Published in Solid-state electronics (01.03.2005)
Published in Solid-state electronics (01.03.2005)
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Journal Article
4H-SiC rectifiers with dual metal planar Schottky contacts
Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G.
Published in IEEE transactions on electron devices (01.05.2002)
Published in IEEE transactions on electron devices (01.05.2002)
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Journal Article
Fabrication and electrical characterization of 4H-SiC p +–n–n + diodes with low differential resistance
Vassilevski, K, Zekentes, K, Constantinidis, G, Strel'chuk, A
Published in Solid-state electronics (01.07.2000)
Published in Solid-state electronics (01.07.2000)
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Journal Article
Study of annealing conditions on the formation of ohmic contacts on p+ 4H–SiC layers grown by CVD and LPE
Vassilevski, K.V, Constantinidis, G, Papanicolaou, N, Martin, N, Zekentes, K
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
Microwave p-i-n diodes and switches based on 4H-SiC
Camara, N., Zekentes, K., Romanov, L.P., Kirillov, A.V., Boltovets, M.S., Vassilevski, K.V., Haddad, G.
Published in IEEE electron device letters (01.02.2006)
Published in IEEE electron device letters (01.02.2006)
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Journal Article
Prospects for SiC electronics and sensors
Wright, Nick G., Horsfall, Alton B., Vassilevski, Konstantin
Published in Materials today (Kidlington, England) (01.01.2008)
Published in Materials today (Kidlington, England) (01.01.2008)
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Journal Article
Experimental determination of electron drift velocity in 4H-SiC p +-n-n+ avalanche diodes
Vassilevski, K.V, Zekentes, K, Zorenko, A.V, Romanov, L.P
Published in IEEE electron device letters (01.10.2000)
Published in IEEE electron device letters (01.10.2000)
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Journal Article
4H-SiC Schottky diode arrays for X-ray detection
Lioliou, G., Chan, H.K., Gohil, T., Vassilevski, K.V., Wright, N.G., Horsfall, A.B., Barnett, A.M.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.12.2016)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.12.2016)
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Journal Article