Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations
Afzalian, A, Vasen, T, Ramvall, P, Shen, T-M, Wu, J, Passlack, M
Published in Journal of physics. Condensed matter (27.06.2018)
Published in Journal of physics. Condensed matter (27.06.2018)
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Journal Article
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., Thelander, C., Dick, K. A., Wernersson, L. - E., Passlack, M.
Published in Scientific reports (17.01.2019)
Published in Scientific reports (17.01.2019)
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Journal Article
Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
van Dal, M.J.H., Vellianitis, G., Doornbos, G., Duriez, B., Holland, M.C., Vasen, T., Afzalian, A., Chen, E., Su, S.K., Chen, T.K., Shen, T.M., Wu, Z.Q., Diaz, C.H.
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Yeqing Lu, Guangle Zhou, Rui Li, Qingmin Liu, Qin Zhang, Vasen, T., Soo Doo Chae, Kosel, T., Wistey, M., Huili Xing, Seabaugh, A., Fay, P.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate
Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Wan Sik Hwang, Qingmin Liu, Vasen, T., Chen Chen, Haijun Zhu, Jenn-Ming Kuo, Koswatta, S., Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Huili Xing
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
InAs FinFETs With [Formula Omitted] nm Fabricated Using a To-Down Etch Process
Oxland, R, X Li, Chang, S W, Wang, S W, Vasen, T, Ramvall, P, Contreras-Guerrero, R, Rojas-Ramirez, J, Holland, M, Doornbos, G, Chang, Y S, Macintyre, D S, Thoms, S, Droopad, R, Y-C, Yeo, Diaz, C H, Thayne, I G, Passlack, M
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
InAs FinFETs With \textrm }=20 nm Fabricated Using a Top-Down Etch Process
Oxland, R., Li, X., Chang, S. W., Wang, S. W., Vasen, T., Ramvall, P., Contreras-Guerrero, R., Rojas-Ramirez, J., Holland, M., Doornbos, G., Chang, Y. S., Macintyre, D. S., Thoms, S., Droopad, R., Yeo, Y.-C, Diaz, C. H., Thayne, I. G., Passlack, M.
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
InAs FinFETs With H fin nm Fabricated Using a Top–Down Etch Process
Oxland, R., Li, X., Chang, S. W., Wang, S. W., Vasen, T., Ramvall, P., Contreras-Guerrero, R., Rojas-Ramirez, J., Holland, M., Doornbos, G., Chang, Y. S., Macintyre, D. S., Thoms, S., Droopad, R., Yeo, Y.-C., Diaz, C. H., Thayne, I. G., Passlack, M.
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
Core-Shell TFET Developments and TFET Limitations
Passlack, M., Ramvall, P., Vasen, T., Afzalian, A., Thelander, C., Dick, K.A., Wernersson, L.-E., Doornbos, G., Holland, M.
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
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Conference Proceeding
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
Vasen, T., Ramvall, P., Afzalian, A., Thelander, C., Dick, K. A., Holland, M., Doornbos, G., Wang, S. W., Oxland, R., Vellianitis, G., van Dal, M. J. H., Duriez, B., Ramirez, J.-R, Droopad, R., Wernersson, L.-E, Samuelson, L., Chen, T.-K, Yeo, Y.-C, Passlack, M.
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I/I Ratio Near \hbox
Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Qingmin Liu, Vasen, T., Haijun Zhu, Jenn-Ming Kuo, Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Huili Xing
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 \mu\hbox/\mu\hbox at 0.5 V
Rui Li, Yeqing Lu, Guangle Zhou, Qingmin Liu, Soo Doo Chae, Vasen, T., Wan Sik Hwang, Qin Zhang, Fay, P., Kosel, T., Wistey, M., Huili Xing, Seabaugh, A.
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs
Guangle Zhou, Lu, Y., Li, R., Zhang, Q., Hwang, W., Liu, Q., Vasen, T., Zhu, H., Kuo, J., Koswatta, S., Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Huili Xing
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
(Invited) III-V Tunnel Field-Effect Transistors
Seabaugh, Alan, Chae, Soo Doo, Fay, Patrick, Hwang, Wan Sik, Kosel, Tom, Li, Rui, Liu, Qingmin, Lu, Yeqing, Vasen, Tim, Wistey, Mark, Xing, Grace (Huili), Zhou, Guangle, Zhang, Qin
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Journal Article
Diagnostic Approach and Management of Lynch Syndrome (Hereditary Nonpolyposis Colorectal Carcinoma): A Guide for Clinicians
Hendriks, Yvonne M.C, de Jong, Andrea E, Morreau, Hans, Tops, Carli M.J, Vasen, Hans F, Wijnen, Juul Th, Breuning, Martijn H, Brocker-Vriends, Annette H.J.T
Published in CA: a cancer journal for clinicians (01.07.2006)
Published in CA: a cancer journal for clinicians (01.07.2006)
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Journal Article
InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)
Chang, S. W., Li, Xu, Oxland, R., Wang, S. W., Wang, C. H., Contreras-Guerrero, R., Bhuwalka, K. K., Doornbos, G., Vasen, T., Holland, M. C., Vellianitis, G., van Dal, M. J. H., Duriez, B., Edirisooriya, M., Rojas-Ramirez, J. S., Ramvall, P., Thoms, S., Peralagu, U., Hsieh, C. H., Chang, Y. S., Yin, K. M., Lind, E., Wernersson, L.-E, Droopad, R., Thayne, I., Passlack, M., Diaz, C. H.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
Zhou, Guangle, Kosel, T., Wistey, M., Fay, P., Seabaugh, A., Xing, Huili, Li, R., Vasen, T., Qi, M., Chae, S., Lu, Y., Zhang, Q., Zhu, H., Kuo, J.-M.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
InAs N-MOSFETs with record performance of I sub(on) = 600 mu A/ mu m at I sub(off) = 100 nA/ mu m (V sub(d) = 0.5 V)
Chang, S W, Li, Xu, Oxland, R, Wang, S W, Wang, CH, Contreras-Guerrero, R, Bhuwalka, K K, Doornbos, G, Vasen, T, Holland, M C, Vellianitis, G, van Dal, MJH, Duriez, B, Edirisooriya, M, Rojas-Ramirez, J S, Ramvall, P, Thoms, S, Peralagu, U, Hsieh, CH, Chang, Y S, Yin, K M, Lind, E, Wernersson, L-E, Droopad, R, Thayne, I, Passlack, M, Diaz, CH
Published in Technical digest - International Electron Devices Meeting (01.12.2013)
Published in Technical digest - International Electron Devices Meeting (01.12.2013)
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Journal Article
Effect of dopant profile on current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions
Kabeer, S., Vasen, T., Wheeler, D., Qin Zhang, Koswatta, S., Haijun Zhu, Clark, K., Jenn-Ming Kuo, Yung-Chung Kao, Corcoran, S., Doyle, B., Fay, P., Kosel, T., Huili Xing, Seabaugh, A.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
Fabrication approach for lateral InGaAs tunnel transistors
Wheeler, D., Kabeer, S., Yeqing Lu, Vasen, T., Qin Zhang, Guangle Zhou, Clark, K., Haijun Zhu, Yung-Chung Kao, Fay, P., Kosel, T., Huili Xing, Seabaugh, A.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding