Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs
Vasallo, B.G., Wichmann, N., Bollaert, S., Roelens, Y., Cappy, A., Gonzalez, T., Pardo, D., Mateos, J.
Published in IEEE transactions on electron devices (01.11.2007)
Published in IEEE transactions on electron devices (01.11.2007)
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Journal Article
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
Mateos, J, Vasallo, B G, Pardo, D, González, T, Galloo, J S, Roelens, Y, Bollaert, S, Cappy, A
Published in Nanotechnology (01.02.2003)
Published in Nanotechnology (01.02.2003)
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Journal Article
Conference Proceeding
Monte Carlo modelling of noise in advanced III–V HEMTs
Mateos, J., Rodilla, H., Vasallo, B. G., González, T.
Published in Journal of computational electronics (01.03.2015)
Published in Journal of computational electronics (01.03.2015)
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Journal Article
Kink effect and noise performance in isolated-gate InAs AlSb high electron mobility transistors
Vasallo, B G, Rodilla, H, González, T, Moschetti, G, Grahn, J, Mateos, J
Published in Semiconductor science and technology (01.06.2012)
Published in Semiconductor science and technology (01.06.2012)
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Journal Article
Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs
Vasallo, Beatriz G., Wichmann, Nicolas, Bollaert, Sylvain, Roelens, Yannick, Cappy, Alain, Gonzalez, TomÁs, Pardo, Daniel, Mateos, Javier
Published in IEEE transactions on electron devices (01.06.2008)
Published in IEEE transactions on electron devices (01.06.2008)
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Journal Article
Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
González, Tomás, Orfao, Beatriz, Pérez, Susana, Mateos, Javier, Vasallo, Beatriz G.
Published in Applied physics express (01.02.2023)
Published in Applied physics express (01.02.2023)
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Journal Article
Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Orfao, B., Abou Daher, M., Peña, R. A., Vasallo, B. G., Pérez, S., Íñiguez-de-la-Torre, I., Paz-Martínez, G., Mateos, J., Roelens, Y., Zaknoune, M., González, T.
Published in Journal of applied physics (07.01.2024)
Published in Journal of applied physics (07.01.2024)
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Journal Article
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
Pena, R. A., Orfao, B., Iniguez-de-la-Torre, I., Paz, G., Daher, M. A., Roelens, Y., Zaknoune, M., Mateos, J., Gonzalez, T., Vasallo, B. G., Perez, S.
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Orfao, B., Di Gioia, G., Vasallo, B. G., Pérez, S., Mateos, J., Roelens, Y., Frayssinet, E., Cordier, Y., Zaknoune, M., González, T.
Published in Journal of applied physics (28.07.2022)
Published in Journal of applied physics (28.07.2022)
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Journal Article
On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, L., Lingaparthi, R., Nethaji, D., Radhakrishnan, K., Iniguez-de-la-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
Published in IEEE transactions on electron devices (01.07.2023)
Published in IEEE transactions on electron devices (01.07.2023)
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Journal Article
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
Orfao, B., Vasallo, B. G., Perez, S., Mateos, J., Moro-Melgar, D., Zaknoune, M., Gonzalez, T.
Published in IEEE transactions on electron devices (01.09.2021)
Published in IEEE transactions on electron devices (01.09.2021)
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Journal Article
Microscopic modeling of nonlinear transport in ballistic nanodevices
Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Galloo, J.S., Bollaert, S., Roelens, Y., Cappy, A.
Published in IEEE transactions on electron devices (01.09.2003)
Published in IEEE transactions on electron devices (01.09.2003)
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Journal Article
Room temperature nonlinear transport in ballistic nanodevices
González, T, Vasallo, B G, Pardo, D, Mateos, J
Published in Semiconductor science and technology (01.04.2004)
Published in Semiconductor science and technology (01.04.2004)
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Journal Article
Conference Proceeding
Interplay between channel and shot noise at the onset of spiking activity in neural membranes
Vasallo, Beatriz G., Mateos, Javier, González, Tomás
Published in Journal of computational electronics (01.06.2020)
Published in Journal of computational electronics (01.06.2020)
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Journal Article
Ion shot noise in Hodgkin–Huxley neurons
Vasallo, Beatriz G., Mateos, Javier, González, Tomás
Published in Journal of computational electronics (01.12.2018)
Published in Journal of computational electronics (01.12.2018)
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Journal Article
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Vasallo, B. G., González, T., Talbo, V., Lechaux, Y., Wichmann, N., Bollaert, S., Mateos, J.
Published in Journal of applied physics (21.01.2018)
Published in Journal of applied physics (21.01.2018)
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Journal Article
Nonlinear effects in T-branch junctions
Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Pichonat, E., Galloo, J.-S., Bollaert, S., Roelens, Y., Cappy, A.
Published in IEEE electron device letters (01.05.2004)
Published in IEEE electron device letters (01.05.2004)
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Journal Article