Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
Mateos, J, Vasallo, B G, Pardo, D, González, T, Galloo, J S, Roelens, Y, Bollaert, S, Cappy, A
Published in Nanotechnology (01.02.2003)
Published in Nanotechnology (01.02.2003)
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Journal Article
Conference Proceeding
Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Orfao, B., Abou Daher, M., Peña, R. A., Vasallo, B. G., Pérez, S., Íñiguez-de-la-Torre, I., Paz-Martínez, G., Mateos, J., Roelens, Y., Zaknoune, M., González, T.
Published in Journal of applied physics (07.01.2024)
Published in Journal of applied physics (07.01.2024)
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Journal Article
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
Pena, R. A., Orfao, B., Iniguez-de-la-Torre, I., Paz, G., Daher, M. A., Roelens, Y., Zaknoune, M., Mateos, J., Gonzalez, T., Vasallo, B. G., Perez, S.
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Orfao, B., Di Gioia, G., Vasallo, B. G., Pérez, S., Mateos, J., Roelens, Y., Frayssinet, E., Cordier, Y., Zaknoune, M., González, T.
Published in Journal of applied physics (28.07.2022)
Published in Journal of applied physics (28.07.2022)
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Journal Article
On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, L., Lingaparthi, R., Nethaji, D., Radhakrishnan, K., Iniguez-de-la-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
Published in IEEE transactions on electron devices (01.07.2023)
Published in IEEE transactions on electron devices (01.07.2023)
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Journal Article
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
Orfao, B., Vasallo, B. G., Perez, S., Mateos, J., Moro-Melgar, D., Zaknoune, M., Gonzalez, T.
Published in IEEE transactions on electron devices (01.09.2021)
Published in IEEE transactions on electron devices (01.09.2021)
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Journal Article
Microscopic modeling of nonlinear transport in ballistic nanodevices
Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Galloo, J.S., Bollaert, S., Roelens, Y., Cappy, A.
Published in IEEE transactions on electron devices (01.09.2003)
Published in IEEE transactions on electron devices (01.09.2003)
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Journal Article
Room temperature nonlinear transport in ballistic nanodevices
González, T, Vasallo, B G, Pardo, D, Mateos, J
Published in Semiconductor science and technology (01.04.2004)
Published in Semiconductor science and technology (01.04.2004)
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Journal Article
Conference Proceeding
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Vasallo, B. G., González, T., Talbo, V., Lechaux, Y., Wichmann, N., Bollaert, S., Mateos, J.
Published in Journal of applied physics (21.01.2018)
Published in Journal of applied physics (21.01.2018)
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Journal Article
Monte Carlo modelling of noise in advanced III–V HEMTs
Mateos, J., Rodilla, H., Vasallo, B. G., González, T.
Published in Journal of computational electronics (01.03.2015)
Published in Journal of computational electronics (01.03.2015)
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Journal Article
Influence of trapping–detrapping processes on shot noise in nondegenerate quasi-ballistic transport
Vasallo, B G, Mateos, J, Pardo, D, González, T
Published in Semiconductor science and technology (01.05.2002)
Published in Semiconductor science and technology (01.05.2002)
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Journal Article
Improvement of interfacial and electrical properties of Al2O3 n-Ga0.47In0.53As for III-V impact ionization MOSFETs
Lechaux, Y, Fadjie, A, Bollaert, S, Talbo, V, Mateos, J, González, T, Vasallo, B G, Wichmann, N
Published in Journal of physics. Conference series (13.10.2015)
Published in Journal of physics. Conference series (13.10.2015)
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Journal Article
Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Talbo, V, Mateos, J, González, T, Lechaux, Y, Wichmann, N, Bollaert, S, Vasallo, B G
Published in Journal of physics. Conference series (13.10.2015)
Published in Journal of physics. Conference series (13.10.2015)
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Journal Article
Kink effect and noise performance in isolated-gate InAs AlSb high electron mobility transistors
Vasallo, B G, Rodilla, H, González, T, Moschetti, G, Grahn, J, Mateos, J
Published in Semiconductor science and technology (01.06.2012)
Published in Semiconductor science and technology (01.06.2012)
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Journal Article
Ballistic nano-devices for high frequency applications
Bollaert, S., Cappy, A., Roelens, Y., Galloo, J.S., Gardes, C., Teukam, Z., Wallart, X., Mateos, J., Gonzalez, T., Vasallo, B.G., Hackens, B., Berdnarz, L., Huynen, I.
Published in Thin solid films (26.03.2007)
Published in Thin solid films (26.03.2007)
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Journal Article
Conference Proceeding
Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors
Vasallo, B. G., Mateos, J., Pardo, D., González, T.
Published in Journal of applied physics (15.06.2004)
Published in Journal of applied physics (15.06.2004)
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Journal Article