Electroluminescence in narrow-gap semiconductors CdHgTe under interband breakdown in an electric field
Nozdrin, Yu.N., Okomel'kov, A.V., Arkhipova, E.A., Kraev, S.A., Varavin, V.S.
Published in Journal of luminescence (01.12.2021)
Published in Journal of luminescence (01.12.2021)
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Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study
Ruzhevich, M.S., Mynbaev, K.D., Firsov, D.D., Chumanov, I.V., Komkov, O.S., Marin, D.V., Varavin, V.S., Yakushev, M.V.
Published in Solid state communications (15.12.2024)
Published in Solid state communications (15.12.2024)
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Investigation and characterization of Hg1−xCdxTe epilayers
Tsybrii-Ivasiv, Z.F., Darchuk-Korovina, L.O., Sizov, F.F., Golenkov, O.G., Bilevych, Ye.O., Sidorov, Yu.G., Varavin, V.S.
Published in Journal of alloys and compounds (17.11.2004)
Published in Journal of alloys and compounds (17.11.2004)
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Transmission Electron Microscopy Study of HgTe/CdHgTe Quantum Wells
Izhnin, I.I., Dvoretsky, S.A., Mynbaev, K.D., Fitsych, O.I., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, Y., Voitsekhovskii, A.V., Korotaev, A.G., Mikhailov, N.N., Varavin, V.S.
Published in 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) (01.09.2018)
Published in 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) (01.09.2018)
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Conference Proceeding
Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.
Published in Vacuum (01.12.2018)
Published in Vacuum (01.12.2018)
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Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates
Varavin, V.S., Marin, D.V., Shefer, D.A., Yakushev, M.V.
Published in Infrared physics & technology (01.11.2018)
Published in Infrared physics & technology (01.11.2018)
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Journal Article
Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.
Published in Surface & coatings technology (15.07.2020)
Published in Surface & coatings technology (15.07.2020)
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Journal Article
The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air
Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.
Published in Surface & coatings technology (15.04.2020)
Published in Surface & coatings technology (15.04.2020)
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Journal Article
Electrophysical Properties of p-Type Undoped and Arsenic-Doped [Hg.sub.1-x][Cd.sub.x]Te Epitaxial Layers with x [approximately equal to] 0.4 Grown by the MOCVD Method
Evstigneev, V.S, Varavin, V.S, Chilyasov, A.V, Remesnik, V.G, Moiseev, A.N, Stepanov, B.S
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
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Journal Article
Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Korotaev, A.G., Voitsekhovskii, A.V., Izhnin, I.I., Mynbaev, K.D., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.
Published in Surface & coatings technology (25.06.2020)
Published in Surface & coatings technology (25.06.2020)
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Journal Article
Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Fitsych, O.I., Swiatek, Z., Jakiela, R.
Published in Infrared physics & technology (01.05.2021)
Published in Infrared physics & technology (01.05.2021)
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Journal Article
Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm
Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu, Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.
Published in Infrared physics & technology (01.03.2020)
Published in Infrared physics & technology (01.03.2020)
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Journal Article
Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te
Izhnin, I.I., Mynbaev, K.D., Swiatek, Z., Morgiel, J., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Marin, D.V., Yakushev, M.V., Fitsych, O.I., Bonchyk, O.Yu, Savytskyy, H.V.
Published in Infrared physics & technology (01.09.2020)
Published in Infrared physics & technology (01.09.2020)
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Journal Article
Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretskii, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Yu
Published in Infrared physics & technology (01.12.2017)
Published in Infrared physics & technology (01.12.2017)
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Journal Article
Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis
Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Bonchyk, O.Yu, Savytskyy, H.V.
Published in Infrared physics & technology (01.05.2019)
Published in Infrared physics & technology (01.05.2019)
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Journal Article
MBE-grown MCT hetero- and nanostructures for IR and THz detectors
Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Sidorov, Yu.G., Shvets, V.A., Ikusov, D.G., Varavin, V.S., Yakushev, M.V., Gumenjuk-Sichevska, J.V., Golenkov, A.G., Lysiuk, I.O., Tsybrii, Z.F., Shevchik-Shekera, A.V., Sizov, F.F., Latyshev, A.V., Aseev, A.L.
Published in Opto-electronics review (01.09.2019)
Published in Opto-electronics review (01.09.2019)
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Journal Article
High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)
Bazovkin, V.M., Dvoretsky, S.A., Guzev, A.A., Kovchavtsev, A.P., Marin, D.V., Polovinkin, V.G., Sabinina, I.V., Sidorov, G.Yu, Tsarenko, A.V., Vasil’ev, V.V., Varavin, V.S., Yakushev, M.V.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-[Hg.sub.1-x][Cd.sub.x]Te with the [Al.sub.2][O.sub.3] Insulator
Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Vasilev, V.V, Varavin, V.S, Dvoretsky, S.A, Mikhailov, N.N, Yakushev, M.V, Sidorov, G.Yu
Published in Journal of communications technology & electronics (01.03.2018)
Published in Journal of communications technology & electronics (01.03.2018)
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Journal Article