Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms
Kobayashi, K., Yamaoka, S., Sueoka, K., Vanhellemont, J.
Published in Journal of crystal growth (15.09.2017)
Published in Journal of crystal growth (15.09.2017)
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Journal Article
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge
Segers, S H, Lauwaert, J, Clauws, P, Simoen, E, Vanhellemont, J, Callens, F, Vrielinck, H
Published in Semiconductor science and technology (01.12.2014)
Published in Semiconductor science and technology (01.12.2014)
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Journal Article
Temperature-independent slow carrier emission from deep-level defects in p-type germanium
Segers, S H, Lauwaert, J, Clauws, P, Simoen, E, Vanhellemont, J, Callens, F, Vrielinck, H
Published in Journal of physics. D, Applied physics (23.10.2013)
Published in Journal of physics. D, Applied physics (23.10.2013)
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Journal Article
Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon
Oberemok, O, Kladko, V, Litovchenko, V, Romanyuk, B, Popov, V, Melnik, V, Sarikov, A, Gudymenko, O, Vanhellemont, J
Published in Semiconductor science and technology (01.05.2014)
Published in Semiconductor science and technology (01.05.2014)
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Journal Article
Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals
Sueoka, K., Vanhellemont, J.
Published in Materials science in semiconductor processing (01.08.2006)
Published in Materials science in semiconductor processing (01.08.2006)
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Journal Article
Conference Proceeding
Experimental and theoretical study of the thermal solubility of the vacancy in germanium
Vanhellemont, J., Lauwaert, J., Witecka, A., Śpiewak, P., Romandic, I., Clauws, P.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Journal Article
In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures
Vanhellemont, J., Anada, S., Nagase, T., Yasuda, H., Bender, H., Rooyackers, R., Vandooren, A.
Published in Physica status solidi. C (01.03.2015)
Published in Physica status solidi. C (01.03.2015)
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Journal Article
Germanium doping for improved silicon substrates and devices
Vanhellemont, J., Chen, J., Lauwaert, J., Vrielinck, H., Xu, W., Yang, D., Rafí, J.M., Ohyama, H., Simoen, E.
Published in Journal of crystal growth (15.02.2011)
Published in Journal of crystal growth (15.02.2011)
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Journal Article
Conference Proceeding
Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon
Oberemok, O., Kladko, V., Litovchenko, V., Romanyuk, B., Popov, V., Melnik, V., Vanhellemont, J.
Published in Physica status solidi. C (01.11.2014)
Published in Physica status solidi. C (01.11.2014)
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Journal Article
Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM
Vanhellemont, J., Anada, S., Nagase, T., Yasuda, H., Schulze, A., Bender, H., Rooyackers, R., Vandooren, A.
Published in Physica status solidi. C (01.08.2015)
Published in Physica status solidi. C (01.08.2015)
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Journal Article
Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing
Zhang, X., Ma, X., Gao, C., Xu, T., Zhao, J., Dong, P., Vanhellemont, J.
Published in Physica status solidi. C (01.01.2014)
Published in Physica status solidi. C (01.01.2014)
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Journal Article
Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes
Gaubas, E., Uleckas, A., Rafi, J.M., Chen, J., Yang, D., Vanhellemont, J.
Published in Physica. B, Condensed matter (01.08.2012)
Published in Physica. B, Condensed matter (01.08.2012)
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Journal Article
Conference Proceeding
Ab initio calculation of the formation energy of charged vacancies in germanium
Śpiewak, P., Sueoka, K., Vanhellemont, J., Kurzydłowski, K.J., Młynarczyk, K., Wabiński, P., Romandic, I.
Published in Physica. B, Condensed matter (15.12.2007)
Published in Physica. B, Condensed matter (15.12.2007)
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Journal Article
Infrared analysis of the precipitated oxide phase in silicon and germanium
De Gryse, O., Vanmeerbeek, P., Vanhellemont, J., Clauws, P.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Journal Article