Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
Merckling, C., Waldron, N., Jiang, S., Guo, W., Richard, O., Douhard, B., Moussa, A., Vanhaeren, D., Bender, H., Collaert, N., Heyns, M., Thean, A., Caymax, M., Vandervorst, W.
Published in Journal of applied physics (21.07.2013)
Published in Journal of applied physics (21.07.2013)
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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Gencarelli, F., Shimura, Y., Kumar, A., Vincent, B., Moussa, A., Vanhaeren, D., Richard, O., Bender, H., Vandervorst, W., Caymax, M., Loo, R., Heyns, M.
Published in Thin solid films (01.09.2015)
Published in Thin solid films (01.09.2015)
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New SPM concept for accurate and repeatable tip positioning
Duriau, E., Clarysse, T., Moussa, A., Vanhaeren, D., Eyben, P., Hantschel, T., Vandervorst, W.
Published in Microelectronic engineering (01.04.2009)
Published in Microelectronic engineering (01.04.2009)
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Conference Proceeding
Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar Cells
Carnel, L., Gordon, I., Van Gestel, D., Vanhaeren, D., Eyben, P., Beaucarne, G., Poortmans, J.
Published in IEEE electron device letters (01.10.2007)
Published in IEEE electron device letters (01.10.2007)
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Journal Article
Materials characterization of WNxCy, WNx and WCx films for advanced barriers
Volders, H, Tokei, Z, Bender, H, Brijs, B, Caluwaerts, R, Carbonell, L, Conard, T, Drijbooms, C, Franquet, A, Garaud, S, Hoflijk, I, Moussa, A, Sinapi, F, Travaly, Y, Vanhaeren, D, Vereecke, G, Zhao, C, Li, W-M, Sprey, H
Published in Microelectronic engineering (01.11.2007)
Published in Microelectronic engineering (01.11.2007)
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Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
Loo, R., Meunier-Beillard, P., Vanhaeren, D., Bender, H., Caymax, M., Vandervorst, W., Dentel, D., Goryll, M., Vescan, L.
Published in Journal of applied physics (01.09.2001)
Published in Journal of applied physics (01.09.2001)
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Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing
Augendre, E., Pawlak, B.J., Kubicek, S., Hoffmann, T., Chiarella, T., Kerner, C., Severi, S., Falepin, A., Ramos, J., De Keersgieter, A., Eyben, P., Vanhaeren, D., Vandervorst, W., Jurczak, M., Absil, P., Biesemans, S.
Published in Solid-state electronics (01.11.2007)
Published in Solid-state electronics (01.11.2007)
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Accurate carrier profiling of n-type GaAs junctions
Clarysse, T., Brammertz, G., Vanhaeren, D., Eyben, P., Goossens, J., Clemente, F., Meuris, M., Vandervorst, W., Srnanek, R., Kinder, R., Sciana, B., Radziewicz, D., Li, Zhiqiang
Published in Materials science in semiconductor processing (01.10.2008)
Published in Materials science in semiconductor processing (01.10.2008)
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Conference Proceeding
Accurate electrical activation characterization of CMOS ultra-shallow profiles
Clarysse, T., Dortu, F., Vanhaeren, D., Hoflijk, I., Geenen, L., Janssens, T., Loo, R., Vandervorst, W., Pawlak, B.J., Ouzeaud, V., Defranoux, C., Faifer, V.N., Current, M.I.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2004)
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TCAD-based methodology for reliability assessment of nanoscaled MOSFETs
Hussin, R., Gerrer, L., Amoroso, S. M., Wang, L., Weckx, P., Franco, J., Vanderheyden, A., Vanhaeren, D., Horiguchi, N., Kaczer, B., Asenov, A.
Published in 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (01.06.2015)
Published in 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (01.06.2015)
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Conference Proceeding
Pore Propagation Directions in P+ Porous Silicon
Vázsonyi, É, Battistig, G, Horváth, Ze, Fried, M, Kádár, G, Pászti, F, Cantin, Jl, Vanhaeren, D, Stalmans, L, Poortmans, J
Published in Journal of porous materials (01.01.2000)
Published in Journal of porous materials (01.01.2000)
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Journal Article
The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45
Wostyn, Kurt, Ragnarsson, Lars-Åke, Schram, Tom, Witters, Liesbeth, Conard, Thierry, Douhard, Bastien, Vanhaeren, Danielle, Holsteyns, Frank, Vandervorst, Wilfried, Horiguchi, Naoto
Published in ECS transactions (15.08.2017)
Published in ECS transactions (15.08.2017)
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, J., Witters, L., Loo, R., Lee, S. H., Sun, J. W., Franco, J., Ragnarsson, Lars-Ake, Brand, A., Lu, X., Yoshida, N., Eneman, G., Brunco, D. P., Vorderwestner, M., Storck, P., Milenin, A. P., Hikavyy, A., Waldron, N., Favia, P., Vanhaeren, D., Vanderheyden, A., Olivier, R., Mertens, H., Arimura, H., Sonja, S., Vrancken, C., Bender, H., Eyben, P., Barla, K., Lee, S.-G, Horiguchi, N., Collaert, N., Thean, A. V.-Y
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Using scaling laws to understand the growth mechanism of atomic layer deposited WNxCy films on methyl-terminated surfaces
Martin Hoyas, A., Schuhmacher, J., Whelan, C. M., Fernandez Landaluce, T., Vanhaeren, D., Maex, K., Celis, J. P.
Published in Journal of applied physics (01.12.2006)
Published in Journal of applied physics (01.12.2006)
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Journal Article
Using scaling laws to understand the growth mechanism of atomic layer deposited W N x C y films on methyl-terminated surfaces
Martin Hoyas, A., Schuhmacher, J., Whelan, C. M., Fernandez Landaluce, T., Vanhaeren, D., Maex, K., Celis, J. P.
Published in Journal of applied physics (01.12.2006)
Published in Journal of applied physics (01.12.2006)
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Journal Article
1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, J., Witters, L., Hellings, G., Krom, R., Franco, J., Eneman, G., Hikavyy, A., Vincent, B., Loo, R., Favia, P., Dekkers, H., Altamirano Sanchez, E., Vanderheyden, A., Vanhaeren, D., Eyben, P., Takeoka, S., Yamaguchi, S., Van Dal, M. J. H., Wang, W.-E, Hong, S.-H, Vandervorst, W., De Meyer, K., Biesemans, S., Absil, P., Horiguchi, N., Hoffmann, T.
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Materials characterization of WN x C y , WN x and WC x films for advanced barriers
Volders, H., Tökei, Z., Bender, H., Brijs, B., Caluwaerts, R., Carbonell, L., Conard, T., Drijbooms, C., Franquet, A., Garaud, S., Hoflijk, I., Moussa, A., Sinapi, F., Travaly, Y., Vanhaeren, D., Vereecke, G., Zhao, C., Li, W.-M., Sprey, H., Jonas, A.M.
Published in Microelectronic engineering (2007)
Published in Microelectronic engineering (2007)
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