Identification of two-dimensional layered dielectrics from first principles
Osanloo, Mehrdad Rostami, Van de Put, Maarten L, Saadat, Ali, Vandenberghe, William G
Published in Nature communications (19.08.2021)
Published in Nature communications (19.08.2021)
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Journal Article
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Groeseneken, G., De Meyer, K.
Published in IEEE transactions on electron devices (01.02.2012)
Published in IEEE transactions on electron devices (01.02.2012)
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Journal Article
Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors
Rostami Osanloo, Mehrdad, Saadat, Ali, Van de Put, Maarten L, Laturia, Akash, Vandenberghe, William G
Published in Nanoscale (23.12.2021)
Published in Nanoscale (23.12.2021)
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Journal Article
Algorithmic Optimization of Transistors Applied to Silicon LDMOS
Chuang, Ping-Ju, Saadat, Ali, Vande Put, Maarten L., Edwards, Hal, Vandenberghe, William G.
Published in IEEE access (01.01.2023)
Published in IEEE access (01.01.2023)
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Journal Article
The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials
Brahma, Madhuchhanda, Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V., Vandenberghe, William G.
Published in NPJ 2D materials and applications (10.03.2023)
Published in NPJ 2D materials and applications (10.03.2023)
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Journal Article
Electronic Transport Properties of Silicane Determined from First Principles
Khatami, Mohammad Mahdi, Gaddemane, Gautam, Van de Put, Maarten L, Fischetti, Massimo V, Moravvej-Farshi, Mohammad Kazem, Pourfath, Mahdi, Vandenberghe, William G
Published in Materials (11.09.2019)
Published in Materials (11.09.2019)
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Journal Article
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors
Verreck, Devin, Van de Put, Maarten, Sorée, Bart, Verhulst, Anne S., Magnus, Wim, Vandenberghe, William G., Collaert, Nadine, Thean, Aaron, Groeseneken, Guido
Published in Journal of applied physics (07.02.2014)
Published in Journal of applied physics (07.02.2014)
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Journal Article
Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn-, V-, and Fe-Doped WSe 2
Tiwari, Sabyasachi, Van de Put, Maarten, Sorée, Bart, Hinkle, Christopher, Vandenberghe, William G
Published in ACS applied materials & interfaces (31.01.2024)
Published in ACS applied materials & interfaces (31.01.2024)
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Journal Article
Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy
Zhang, Chenxi, Kc, Santosh, Nie, Yifan, Liang, Chaoping, Vandenberghe, William G, Longo, Roberto C, Zheng, Yongping, Kong, Fantai, Hong, Suklyun, Wallace, Robert M, Cho, Kyeongjae
Published in ACS nano (23.08.2016)
Published in ACS nano (23.08.2016)
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Journal Article
Impact of passivation on the Dirac cones of 2D topological insulators
Deylgat, Emeric, Tiwari, Sabyasachi, Vandenberghe, William G., Sorée, Bart
Published in Journal of applied physics (21.06.2022)
Published in Journal of applied physics (21.06.2022)
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Journal Article
Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn‑, V‑, and Fe-Doped WSe2
Tiwari, Sabyasachi, Van de Put, Maarten, Sorée, Bart, Hinkle, Christopher, Vandenberghe, William G.
Published in ACS applied materials & interfaces (31.01.2024)
Published in ACS applied materials & interfaces (31.01.2024)
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