The dependence of the optical energies on InGaN composition
O'Donnell, K.P, Martin, R.W, Trager-Cowan, C, White, M.E, Esona, K, Deatcher, C, Middleton, P.G, Jacobs, K, Van der Stricht, W, Merlet, C, Gil, B, Vantomme, A, Mosselmans, J.F.W
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Journal Article
Elastic strain in InGaN and AlGaN layers
Wu, M.F., Yao, Shude, Vantomme, A., Hogg, S., Langouche, G., Van der Stricht, W., Jacobs, K., Moerman, I., Li, J., Zhang, G.Y.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.06.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.06.2000)
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Journal Article
Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J.
Published in Journal of crystal growth (01.01.1997)
Published in Journal of crystal growth (01.01.1997)
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Journal Article
Conference Proceeding
Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD
Duxbury, N., Dawson, P., Bangert, U., Thrush, E.J., van der Stricht, W., Jacobs, K., Moerman, I.
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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Journal Article
Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers
O'Donnell, K.P., White, M.E., Pereira, S., Wu, M.F., Vantomme, A., Van Der Stricht, W., Jacobs, K.
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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Journal Article
The optical and structural properties of InGaN epilayers with very high indium content
Bayliss, S.C, Demeester, P, Fletcher, I, Martin, R.W, Middleton, P.G, Moerman, I, O’Donnell, K.P, Sapelkin, A, Trager-Cowan, C, Van Der Stricht, W, Young, C
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
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Journal Article
Conference Proceeding
Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers
O’Donnell, K.P., Martin, R.W., Middleton, P.G., Bayliss, S.C., Fletcher, I., Van der Stricht, W., Demeester, P., Moerman, I.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
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Journal Article
Conference Proceeding
Growth and in situ monitoring of GaN using IR interference effects
Considine, L., Thrush, E.J., Crawley, J.A., Jacobs, K., Van der Stricht, W., Moerman, I., Demeester, P., Park, G.H., Hwang, S.J., Song, J.J.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Journal Article
Conference Proceeding
The optical linewidth of InGaN light emitting diodes
Middleton, P.G, O'Donnell, K.P, Breitkopf, T, Kalt, H, Van der Stricht, W, Moerman, I, Demeester, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
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Journal Article
Conference Proceeding
Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0001)
Wu, M.F., Vantomme, A., Hogg, S., Langouche, G., Van der Stricht, W., Jacobs, K., Moerman, I.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.03.2001)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.03.2001)
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Journal Article
Intrinsic Infrared Luminescence from InGaN Epilayers
O'Donnell, K.P., Martin, R.W., Pereira, S., Bangura, A., White, M.E., van der Stricht, W., Jacobs, K.
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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Journal Article
Rutherford backscattering/channeling study of a thin AlGaN layer on Al 2O 3(0 0 0 1)
Wu, M.F., Vantomme, A., Hogg, S., Langouche, G., Van der Stricht, W., Jacobs, K., Moerman, I.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (2001)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (2001)
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Journal Article
Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD
Harris, J.J., Lee, K, Harrison, I., Flannery, L. B., Korakakis, D., Cheng, T. S., Foxon, C. T., Bougrioua, Z., Moerman, I., Stricht, W. van Der, Thrush, E. J., Hamilton, B., Ferhah, K.
Published in Physica status solidi. A, Applications and materials science (01.11.1999)
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Published in Physica status solidi. A, Applications and materials science (01.11.1999)
Journal Article
MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells
Van Der Stricht, W., Moerman, I., Demeester, P., Thrush, E.J., Crawley, J.A.
Published in 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application (1997)
Published in 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application (1997)
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Conference Proceeding