Transient characteristics of GaN-based heterostructure field-effect transistors
Kohn, E., Daumiller, I., Kunze, M., Neuburger, M., Seyboth, M., Jenkins, T.J., Sewell, J.S., Van Norstand, J., Smorchkova, Y., Mishra, U.K.
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
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