High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography
Agnello, P., Ivers, T., Warm, C., Wise, R., Wachnik, R., Schepis, D., Sankaran, S., Norum, J., Luning, S., Li, Y., Khare, M., Grill, A., Edelstein, D., Chen, X., Brown, D., Augur, R., Wu, S., Yu, J., Wong, R.C., Werking, J., Wehella-Gamage, D., Vayshenker, A., Van Meer, H., Van Den Nieuwenhuizen, R., Tian, C., Tabakman, K., Sung, C.Y., Standaert, T., Simon, A., Sim, J., Sheraw, C., Restaino, D., Rausch, W., Pal, R., Prindle, C., Ouyang, X., Ouyang, C., Ontalus, V., Nummy, K., Nielsen, D., Nicholson, L., McKnight, A., Lustig, N., Liu, X., Lee, M.H., Lea, D., Larosa, G., Landers, W., Kim, B., Kelling, M., Jeng, S.-J., Holt, J., Hargrove, M., Grunow, S., Greco, S., Gates, S., Frye, A., Fisher, P., Domenicucci, A., Dimitrakopoulos, C., Costrini, G., Chou, A., Cheng, J., Butt, S., Black, L., Belyansky, M., Ahsan, I., Adam, T., Gabor, A., Wu, C.-H.J., Yang, D., Crouse, M., Robinson, C., Corliss, D., Fonseca, C., Johnson, J., Weybright, M., Waite, A., Nayfeh, H.M., Onishi, K., Narasimha, S.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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