Linewidth effect and phase control in Ni fully silicided gates
Kittl, J.A., Lauwers, A., Hoffmann, T., Veloso, A., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Demeurisse, C., Vrancken, C., Brijs, B., Absil, P., Biesemans, S.
Published in IEEE electron device letters (01.08.2006)
Published in IEEE electron device letters (01.08.2006)
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Journal Article
Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Published in IEEE electron device letters (01.03.2006)
Published in IEEE electron device letters (01.03.2006)
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Journal Article
Silicides and germanides for nano-CMOS applications
Kittl, J.A., Opsomer, K., Torregiani, C., Demeurisse, C., Mertens, S., Brunco, D.P., Van Dal, M.J.H., Lauwers, A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2008)
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Journal Article
CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS: \hbox\hbox, and \hbox\hbox) on HfSiON
Kittl, J.A., Lauwers, A., Veloso, A., Hoffmann, T., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Brus, S., Demeurisse, C., Vrancken, C., Absil, P., Biesemans, S.
Published in IEEE electron device letters (01.12.2006)
Published in IEEE electron device letters (01.12.2006)
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Journal Article
Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
van Dal, M.J.H., Vellianitis, G., Doornbos, G., Duriez, B., Holland, M.C., Vasen, T., Afzalian, A., Chen, E., Su, S.K., Chen, T.K., Shen, T.M., Wu, Z.Q., Diaz, C.H.
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors
van Dal, M.J.H., Pourtois, G., Cunniffe, J., Veloso, A., Lauwers, A., Maex, K., Kittl, J.A.
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
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Journal Article
Demonstration of short-channel self-aligned Pt/sub 2/Si-FUSI pMOSFETs with low threshold voltage (-0.29 V) on SiON and HfSiON
van Dal, M.J.H., Boccardi, G., Veloso, A., Locorotondo, S., Shi, X., Demeurisse, C., Vrancken, C., Verbeeck, R., Lauwers, A., Kittl, J.A.
Published in IEEE electron device letters (01.08.2006)
Published in IEEE electron device letters (01.08.2006)
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Journal Article
Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates
Kittl, J.A., Pawlak, M.A., Lauwers, A., Demeurisse, C., Hoffmann, T., Veloso, A., Anil, K.G., Kubicek, S., Niwa, M., van Dal, M.J.H., Richard, O., Jurczak, M., Vrancken, C., Chiarella, T., Brus, S., Maex, K., Biesemans, S.
Published in Microelectronic engineering (01.11.2006)
Published in Microelectronic engineering (01.11.2006)
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Journal Article
Conference Proceeding
Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
Kittl, J.A., Pawlak, M.A., Lauwers, A., Demeurisse, C., Opsomer, K., Anil, K.G., Vrancken, C., van Dal, M.J.H., Veloso, A., Kubicek, S., Absil, P., Maex, K., Biesemans, S.
Published in IEEE electron device letters (01.01.2006)
Published in IEEE electron device letters (01.01.2006)
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Journal Article
Permeation of nitrogen in solid nickel and deformation phenomena accompanying internal nitridation
Kodentsov, A.A, van Dal, M.J.H, Cserháti, C, Daróczi, L, van Loo, F.J.J
Published in Acta materialia (08.09.1999)
Published in Acta materialia (08.09.1999)
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Journal Article
First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling
Merelle, T., Curatola, G., Nackaerts, A., Collaert, N., van Dal, M.J.H., Doornbos, G., Doorn, T.S., Christie, P., Vellianitis, G., Duriez, B., Duffy, R., Pawlak, B.J., Voogt, F.C., Rooyackers, R., Witters, L., Jurczak, M., Lander, R.J.P.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
The Influence of TiN Thickness and [Formula Omitted] Formation Method on the Structural and Electrical Properties of [Formula Omitted] Gate Stacks
Vellianitis, G, van Dal, M.J.H, Boccardi, G, Duriez, B, Voogt, F.C, Kaiser, M, Witters, L, Lander, R.J.P
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Journal Article
Intrinsic diffusion and Kirkendall effect in Ni–Pd and Fe–Pd solid solutions
van Dal, M.J.H., Pleumeekers, M.C.L.P., Kodentsov, A.A., van Loo, F.J.J.
Published in Acta materialia (24.01.2000)
Published in Acta materialia (24.01.2000)
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Journal Article
The Influence of TiN Thickness and \hbox Formation Method on the Structural and Electrical Properties of \hbox/ \hbox/\hbox Gate Stacks
Vellianitis, G., van Dal, M.J.H., Boccardi, G., Duriez, B., Voogt, F.C., Kaiser, M., Witters, L., Lander, R.J.P.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Journal Article
Intrinsic diffusion in Ni3Al system
Cserháti, C, Paul, A, Kodentsov, A.A, van Dal, M.J.H, van Loo, F.J.J
Published in Intermetallics (01.04.2003)
Published in Intermetallics (01.04.2003)
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Journal Article