High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
Zhuravlev, K. S., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L., Mikitchuk, K. B.
Published in Technical physics (01.09.2021)
Published in Technical physics (01.09.2021)
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The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes
Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I., Zhuravlev, K. S.
Published in Technical physics letters (01.02.2019)
Published in Technical physics letters (01.02.2019)
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Al2O3/InGaAs interface passivation by fluorine-containing anodic layers
Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P., Gutakovskii, A. K.
Published in Journal of applied physics (28.02.2022)
Published in Journal of applied physics (28.02.2022)
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The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface
Aksenov, M. S., Valisheva, N. A., Kovchavtsev, A. P.
Published in Technical physics letters (01.06.2021)
Published in Technical physics letters (01.06.2021)
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Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine
Valisheva, N. A, Bakulin, A. V, Aksenov, M. S, Khandarkhaeva, S. E, Kulkova, S. E
Published in Journal of physical chemistry. C (28.09.2017)
Published in Journal of physical chemistry. C (28.09.2017)
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The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors
Kovchavtsev, A. P., Tsarenko, A. V., Guzev, A. A., Aksenov, M. S., Polovinkin, V. G., Nastovjak, A. E., Valisheva, N. A.
Published in Journal of applied physics (28.09.2015)
Published in Journal of applied physics (28.09.2015)
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Journal Article
High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M., Chistokhin, I. B.
Published in Technical physics letters (01.07.2019)
Published in Technical physics letters (01.07.2019)
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A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure
Putyato, M. A., Valisheva, N. A., Petrushkov, M. O., Preobrazhenskii, V. V., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Vasev, A. V., Skachkov, A. F., Yurko, G. I., Nesterenko, I. I.
Published in Technical physics (01.07.2019)
Published in Technical physics (01.07.2019)
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Journal Article
Features of current flow in structures based on Au/Ti/n-InAlAs Schottky barriers
Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Zhuravlev, K. S., Guzev, A. A.
Published in Technical physics letters (01.06.2017)
Published in Technical physics letters (01.06.2017)
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Journal Article
Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface
Valisheva, N.A., Tereshchenko, O.E., Prosvirin, I.P., Levtsova, T.A., Rodjakina, E.E., Kovchavcev, A.V.
Published in Applied surface science (15.07.2010)
Published in Applied surface science (15.07.2010)
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Optical properties of native (anodic) layer on the InAlAs surface of different morphology
Valisheva, N.A., Kruchinin, V.N., Aksenov, M.S., Azarov, I.A., Nedomolkina, A.A.
Published in Thin solid films (30.06.2021)
Published in Thin solid films (30.06.2021)
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Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance
Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E., Valisheva, N. A.
Published in Journal of applied physics (07.05.2018)
Published in Journal of applied physics (07.05.2018)
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Single Photon Detectors Based on InP/InGaAs/InP Avalanche Photodiodes
Preobrazhenskii, V. V., Chistokhin, I. B., Putyato, M. A., Valisheva, N. A., Emelyanov, E. A., Petrushkov, M. O., Pleshkov, A. S., Neizvestny, I. G., Ryabtsev, I. I.
Published in Optoelectronics, instrumentation, and data processing (01.09.2021)
Published in Optoelectronics, instrumentation, and data processing (01.09.2021)
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Journal Article
Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts
Chistokhin, I.B., Aksenov, M.S., Valisheva, N.A., Dmitriev, D.V., Kovchavtsev, A.P., Gutakovskii, A.K., Prosvirin, I.P., Zhuravlev, K.S.
Published in Materials science in semiconductor processing (01.02.2018)
Published in Materials science in semiconductor processing (01.02.2018)
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Journal Article
High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
Zhuravlev, K. S., Chizh, A. L., Mikitchuk, K. B., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S.
Published in Journal of semiconductors (01.01.2022)
Published in Journal of semiconductors (01.01.2022)
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Journal Article
Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures
Kuryshev, G. L., Kovchavtsev, A. P., Valisheva, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2001)
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