Search Results - "VORONKOV VLADIMIR V" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Processes and apparatus for preparing heterostructures with reduced strain by radial distension

Processes and apparatus for preparing heterostructures with reduced strain by radial distension

by FALSTER, ROBERT J, PITNEY, JOHN A, ALBRECHT, PETER D, VORONKOV, VLADIMIR V
Year of Publication 21.04.2018

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Patent

Processes for suppressing minority carrier lifetime degradation in silicon wafers

Processes for suppressing minority carrier lifetime degradation in silicon wafers

by FALSTER ROBERT J, VORONKOV VLADIMIR V
Year of Publication 12.02.2014

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Patent

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

by FALSTER ROBERT J.,VORONKOV VLADIMIR V
Year of Publication 11.10.2006

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Patent

PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER

PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER

by FALSTER ROBERT J, VORONKOV VLADIMIR V
Year of Publication 27.09.2006

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Patent

Process for the production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei

Process for the production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei

by FALSTER, ROBERT J, GAMBARO, DANIELA, VORONKOV, VLADIMIR V, CORNARA, MARCO, OLMO, MASSIMILIANO
Year of Publication 11.02.2018

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Patent

ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING

ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING

by FALSTER ROBERT J, VORONKOV VLADIMIR V, BORIONETTI GABRIELLA
Year of Publication 21.05.2009

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Patent

PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER

PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER

by FALSTER, ROBERT J, VORONKOV, VLADIMIR V
Year of Publication 05.04.2006

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Patent

Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

by MUTTI PAOLO, VORONKOV VLADIMIR V
Year of Publication 18.04.2002

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Patent

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF

by FALSTER ROBERT J, CHO CHANRAE, RAVANI MARCO, VORONKOV VLADIMIR V, LEE DONGMYUN, MOIRAGHI LUCA
Year of Publication 13.10.2011

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Patent

SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY

SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY

by FALSTER ROBERT J, VORONKOV VLADIMIR V, MUTTI PAOLO, BONOLI FRANCESCO
Year of Publication 22.01.2009

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Patent

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

by FALSTER ROBERT J, VORONKOV VLADIMIR V
Year of Publication 18.10.2005

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Patent

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

by Falster, Robert J, Voronkov, Vladimir V
Year of Publication 18.10.2005

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Patent

Process for preparing single crystal silicon having improved gate oxide integrity

Process for preparing single crystal silicon having improved gate oxide integrity

by Falster, Robert J, Voronkov, Vladimir V, Mutti, Paolo, Bonoli, Francesco
Year of Publication 07.10.2008

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Patent

Process for preparing single crystal silicon having improved gate oxide integrity

Process for preparing single crystal silicon having improved gate oxide integrity

by FALSTER ROBERT J, VORONKOV VLADIMIR V, MUTTI PAOLO, BONOLI FRANCESCO
Year of Publication 07.10.2008

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Patent

Processes for suppressing minority carrier lifetime degradation in silicon wafers

Processes for suppressing minority carrier lifetime degradation in silicon wafers

by FALSTER, ROBERT J, VORONKOV, VLADIMIR V
Year of Publication 01.02.2013

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Patent

PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER

PROCESS FOR PREPARING A STABILIZED IDEAL OXYGEN PRECIPITATING SILICON WAFER

by FALSTER, ROBERT, J, VORONKOV, VLADIMIR V
Year of Publication 27.01.2005

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Patent

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

by FALSTER ROBERT J, VORONKOV VLADIMIR V
Year of Publication 13.01.2005

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Patent

Effects of Annealing on the Electrical Properties of Nitrogen-Doped Float-Zoned Silicon

Effects of Annealing on the Electrical Properties of Nitrogen-Doped Float-Zoned Silicon

by Voronkov, Vladimir V., Voronkova, Galina, Batunina, Anna, Falster, R. J., Moiraghi, Luca, Milvidski, Mikhail
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)

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Journal Article

DIFFUSION CONTROL IN HEAVILY DOPED SUBSTRATES

DIFFUSION CONTROL IN HEAVILY DOPED SUBSTRATES

by LEE, DONG, MYUN, RAVANI, MARCO, FALSTER, ROBERT, J, CHO, CHANRAE, VORONKOV, VLADIMIR, V, MOIRAGHI, LUCA
Year of Publication 17.03.2010

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Patent

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF

by FALSTER ROBERT J, CHO CHANRAE, RAVANI MARCO, VORONKOV VLADIMIR V, LEE DONGMYUN, MOIRAGHI LUCA
Year of Publication 08.10.2009

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Patent

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