Vertical GAAFETs for the Ultimate CMOS Scaling
Yakimets, Dmitry, Eneman, Geert, Schuddinck, Pieter, Trong Huynh Bao, Bardon, Marie Garcia, Raghavan, Praveen, Veloso, Anabela, Collaert, Nadine, Mercha, Abdelkarim, Verkest, Diederik, Voon-Yew Thean, Aaron, De Meyer, Kristin
Published in IEEE transactions on electron devices (01.05.2015)
Published in IEEE transactions on electron devices (01.05.2015)
Get full text
Journal Article
Strain analysis comparison in complementary and nanosheet field-effect transistor devices: Nanobeam vs Bessel electron diffraction
Favia, Paola, Veloso, Anabela, Eneman, Geert, Mehta, Ankit Nalin, Zhou, Xiuju, Richard, Olivier, Geypen, Jef, Grieten, Eva
Published in BIO web of conferences (2024)
Published in BIO web of conferences (2024)
Get full text
Journal Article
(Invited) Vertical Nanowire FET Integration and Device Aspects
Veloso, Anabela, Altamirano-Sánchez, Efraín, Brus, Stephan, Chan, B. T., Cupak, Miroslav, Dehan, Morin, Delvaux, Christie, Devriendt, Katia, Eneman, Geert, Ercken, Monique, Huynh-Bao, Trong, Ivanov, Tsvetan, Matagne, Philippe, Merckling, Clement, Paraschiv, Vasile, Ramesh, Siva, Rosseel, Erik, Rynders, Luc, Sibaja-Hernandez, Arturo, Suhard, Samuel, Tao, Zheng, Vecchio, Emma, Waldron, Niamh, Yakimets, Dmitry, De Meyer, Kristin, Mocuta, Dan, Collaert, Nadine, Thean, Aaron
Published in ECS transactions (04.05.2016)
Published in ECS transactions (04.05.2016)
Get full text
Journal Article
Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor
Lee, Jae Woo, Simoen, Eddy, Veloso, Anabela, Cho, Moon Ju, Boccardi, Guillaume, Ragnarsson, Lars-Åke, Chiarella, Thomas, Horiguchi, Naoto, Groeseneken, Guido, Thean, Aaron
Published in ACS applied materials & interfaces (25.09.2013)
Published in ACS applied materials & interfaces (25.09.2013)
Get full text
Journal Article
(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs
Veloso, Anabela, Paraschiv, Vasile, Vecchio, Emma, Devriendt, Katia, Li, Waikin, Simoen, Eddy, Chan, B. T., Tao, Zheng, Rosseel, Erik, Loo, Roger, Milenin, Alexey P., Kunert, Bernardette, Teugels, Lieve, Sebaai, Farid, Lorant, Christophe, van Dorp, Dennis, Altamirano-Sánchez, Efraín, Brus, Stephan, Marien, Philippe, Fleischmann, Claudia, Melkonyan, Davit, Huynh-Bao, Trong, Eneman, Geert, Hellings, Geert, Sibaja-Hernandez, Arturo, Matagne, Philippe, Waldron, Niamh, Mocuta, Dan, Collaert, Nadine
Published in ECS transactions (15.08.2017)
Published in ECS transactions (15.08.2017)
Get full text
Journal Article
Two- and Three-Dimensional Fully-Depleted Extension-Less Devices for Advanced Logic and Memory Applications
Veloso, Anabela, Keersgieter, An De, Aoulaiche, Marc, Jurczak, Malgorzata, Thean, Aaron, Horiguchi, Naoto
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications
Veloso, Anabela, Keersgieter, An De, Brus, Stephan, Horiguchi, Naoto, Absil, Philippe P, Hoffmann, Thomas
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article
Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications
Veloso, Anabela, Keersgieter, An De, Brus, Stephan, Horiguchi, Naoto, Absil, Philippe P., Hoffmann, Thomas
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article
W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-$k$/Metal Gate Devices for (Sub-)22 nm Technology Nodes
Veloso, Anabela, Chew, Soon Aik, Schram, Tom, Dekkers, Harold, Ammel, Annemie Van, Witters, Thomas, Tielens, Hilde, Heylen, Nancy, Devriendt, Katia, Sebaai, Farid, Brus, Stephan, Ragnarsson, Lars-$Å$ke, Pantisano, Luigi, Eneman, Geert, Carbonell, Laure, Richard, Olivier, Favia, Paola, Geypen, Jef, Bender, Hugo, Higuchi, Yuichi, Phatak, Anup, Thean, Aaron, Horiguchi, Naoto
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme
Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Åke, Higuchi, Yuichi, Arimura, Hiroaki, Lee, Jae Woo, Simoen, Eddy, Cho, Moon Ju, Roussel, Philippe J., Paraschiv, Vasile, Shi, Xiaoping, Schram, Tom, Chew, Soon Aik, Brus, Stephan, Dangol, Anish, Vecchio, Emma, Sebaai, Farid, Kellens, Kristof, Heylen, Nancy, Devriendt, Katia, Dekkers, Harold, Van Ammel, Annemie, Witters, Thomas, Conard, Thierry, Vaesen, Inge, Richard, Olivier, Bender, Hugo, Athimulam, Raja, Chiarella, Thomas, Thean, Aaron, Horiguchi, Naoto
Published in Japanese Journal of Applied Physics (17.03.2014)
Published in Japanese Journal of Applied Physics (17.03.2014)
Get full text
Journal Article
(Invited) Stress Techniques in Advanced Transistor Architectures: Bulk FinFETs and Implant-Free Quantum Well Transistors
Eneman, Geert, Witters, Liesbeth, Collaert, Nadine, Mitard, Jerome, Hellings, Geert, Yamaguchi, Shinpei, De Keersgieter, An, Hikavyy, Andriy, Vincent, Benjamin, Favia, Paola, Bender, Hugo, Veloso, Anabela, Chiarella, Thomas, Togo, Mitsuhiro, Loo, Roger, De Meyer, Kristin, Mercha, Abdelkarim, Horiguchi, Naoto, Thean, Aaron
Published in ECS transactions (27.04.2012)
Published in ECS transactions (27.04.2012)
Get full text
Journal Article
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
Simoen, Eddy, Veloso, Anabela, Matagne, Philippe, Claeys, Cor
Published in Solid-state electronics (01.02.2023)
Published in Solid-state electronics (01.02.2023)
Get full text
Journal Article