A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
Larcher, Luca, Puglisi, Francesco Maria, Pavan, Paolo, Padovani, Andrea, Vandelli, Luca, Bersuker, Gennadi
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- \kappa Gate-Stacks
Vandelli, Luca, Larcher, Luca, Veksler, Dmitry, Padovani, Andrea, Bersuker, Gennadi, Matthews, Kenneth
Published in IEEE transactions on electron devices (01.07.2014)
Published in IEEE transactions on electron devices (01.07.2014)
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Journal Article
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations
Padovani, A., Arreghini, A., Vandelli, L., Larcher, L., Van den bosch, G., Pavan, P., Van Houdt, J.
Published in IEEE transactions on electron devices (01.09.2011)
Published in IEEE transactions on electron devices (01.09.2011)
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Journal Article
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Padovani, Andrea, Larcher, Luca, Pirrotta, Onofrio, Vandelli, Luca, Bersuker, Gennadi
Published in IEEE transactions on electron devices (01.06.2015)
Published in IEEE transactions on electron devices (01.06.2015)
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Journal Article
A New Physical Method Based on CV - GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- k /III-V MOSFETs
Sereni, Gabriele, Vandelli, Luca, Veksler, Dmitry, Larcher, Luca
Published in IEEE transactions on electron devices (01.03.2015)
Published in IEEE transactions on electron devices (01.03.2015)
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Journal Article
A simulation framework for modeling charge transport and degradation in high-k stacks
Larcher, Luca, Padovani, Andrea, Vandelli, Luca
Published in Journal of computational electronics (01.12.2013)
Published in Journal of computational electronics (01.12.2013)
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Journal Article
A microscopic physical description of RTN current fluctuations in HfOx RRAM
Puglisi, Francesco Maria, Pavan, Paolo, Vandelli, Luca, Padovani, Andrea, Bertocchi, Matteo, Larcher, Luca
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
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Conference Proceeding
A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis
Larcher, Luca, Puglisi, Francesco Maria, Pavan, Paolo, Padovani, Andrea, Vandelli, Luca, Bersuker, Gennadi
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
A Compact Model of Program Window in HfO x RRAM Devices for Conductive Filament Characteristics Analysis
Larcher, Luca, Puglisi, Francesco Maria, Pavan, Paolo, Padovani, Andrea, Vandelli, Luca, Bersuker, Gennadi
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
Get full text
Journal Article
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- \(\kappa \) Gate-Stacks
Vandelli, Luca, Larcher, Luca, Veksler, Dmitry, Padovani, Andrea, Bersuker, Gennadi, Matthews, Kenneth
Published in IEEE transactions on electron devices (01.07.2014)
Published in IEEE transactions on electron devices (01.07.2014)
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Journal Article
Progresses in Modeling HfO x RRAM Operations and Variability
Larcher, Luca, Pirrotta, Onofrio, Puglisi, Francesco Maria, Padovani, Andrea, Pavan, Paolo, Vandelli, Luca
Published in ECS transactions (08.08.2014)
Published in ECS transactions (08.08.2014)
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Journal Article
Progresses in Modeling HfOx RRAM Operations and Variability
Larcher, Luca, Pirrotta, Onofrio, Puglisi, Francesco Maria, Padovani, Andrea, Pavan, Paolo, Vandelli, Luca
Published in ECS transactions (01.01.2014)
Published in ECS transactions (01.01.2014)
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Journal Article
Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories
Suhane, Amit, Arreghini, Antonio, Van den bosch, Geert, Vandelli, Luca, Padovani, Andrea, Breuil, Laurent, Larcher, Luca, De Meyer, Kristin, Van Houdt, Jan
Published in IEEE electron device letters (01.09.2010)
Published in IEEE electron device letters (01.09.2010)
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Journal Article
A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction
Vandelli, L, Padovani, A, Larcher, L, Bersuker, G, Jung Yum, Pavan, P
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding