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"VAN DORT MAARTEN J"
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"VAN DORT MAARTEN J"
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Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs
by
van Dort, M.J.
,
Woerlee, P.H.
,
Walker, A.J.
,
Juffermans, C.A.H.
,
Lifka, H.
Published in
IEEE transactions on electron devices
(01.04.1992)
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Programmable semiconductor device with high breakdown voltage and high-density programmable semiconductor memory having such a semiconductor device
by
VAN DORT
;
MAARTEN J
Year of Publication
01.10.1996
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Semiconductor device having a nonvolatile memory cell in which the floating gate is charged with hot charge carriers at the source side
by
VAN DORT
;
MAARTEN J
,
WALKER; ANDREW J
Year of Publication
27.10.1998
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Method of manufacturing a semiconductor device, and semiconductor device manufactured by such a method
by
VAN DORT
;
MAARTEN J
,
LUDIKHUIZE; ADRIANUS W
Year of Publication
28.07.1998
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PROGRAMMEERBARE HALFGELEIDERINRICHTING ALSMEDE PROGRAMMEERBAAR HALFGELEIDERGEHEUGEN OMVATTENDE EEN DERGELIJKE HALFGELEIDERINRICHTING
by
VAN DORT MAARTEN J
Year of Publication
16.08.1995
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basic electric elements
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electric solid state devices not otherwise provided for
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