Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters
Zhevnyak, O. G., Borzdov, V. M., Borzdov, A. V., Petlitsky, A. N.
Published in Pribory i metody izmererij (22.12.2022)
Published in Pribory i metody izmererij (22.12.2022)
Get full text
Journal Article
Electron transport in armchair single-wall carbon nanotubes
Pozdnyakov, D.V., Galenchik, V.O., Komarov, F.F., Borzdov, V.M.
Published in Physica. E, Low-dimensional systems & nanostructures (01.07.2006)
Published in Physica. E, Low-dimensional systems & nanostructures (01.07.2006)
Get full text
Journal Article
Monte Carlo simulation of electron heating in a one-dimensional GaAs-quantum conductor
BORZDOV, V. M, ZHEVNYAK, O. G, KOMAROV, F. F, KHOMICH, A. V
Published in Journal of engineering physics and thermophysics (01.03.1997)
Published in Journal of engineering physics and thermophysics (01.03.1997)
Get full text
Journal Article
Calculation of the gate current due to injection of hot electrons into the subgate oxide of a submicrometer MOS field-effect transistor
BORZDOV, V. M, BOREIKO, N. P, GALENCHIK, V. O, ZHEVNYAK, O. G, KOMAROV, F. F
Published in Journal of engineering physics and thermophysics (01.05.1998)
Published in Journal of engineering physics and thermophysics (01.05.1998)
Get full text
Journal Article
The influence of energy levels broadening on intersubband acoustic phonon scattering rates in quantum wire
Borzdov, V.M., Galenchik, V.O., Komarov, F.F., Pozdnyakov, D.V., Zhevnyak, O.G.
Published in Physics letters. A (08.12.2003)
Published in Physics letters. A (08.12.2003)
Get full text
Journal Article
Calculation of current-voltage characteristics of gallium arsenide symmetric double-barrier resonance tunneling structures with allowance for the destruction of electron-wave coherence in quantum wells
Pozdnyakov, D. V., Borzdov, V. M., Komarov, F. F.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2004)
Get full text
Journal Article
Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures
Borzdov, V M, Speransky, D S
Published in 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2010)
Published in 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2010)
Get full text
Conference Proceeding
NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR
Borzdov, A. V., Borzdov, V. M., Dorozhkin, N. N.
Published in Pribory i metody izmererij (01.01.2016)
Published in Pribory i metody izmererij (01.01.2016)
Get full text
Journal Article
Technology Computer-Aided Design and Study of Prototypes of a Silicon Zener Diode
Dudar, N. L., Borzdov, V. M., Turtsevich, A. S.
Published in Journal of engineering physics and thermophysics (01.07.2014)
Published in Journal of engineering physics and thermophysics (01.07.2014)
Get full text
Journal Article
Influence of the doping level and the temperature on electron mobility in then channel of an mos field-effect transistor
Andreev, A. D., Borzdov, V. M., Valiev, A. A., Zhevnyak, O. G., Komarov, F. F.
Published in Journal of engineering physics and thermophysics (01.01.1998)
Published in Journal of engineering physics and thermophysics (01.01.1998)
Get full text
Journal Article