Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Sinitsyn, M. A., Cherkashin, N. A., Karpov, S. Y.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2015)
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Journal Article
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
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Journal Article
Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Usov, S. O., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Cherkashin, N. A., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (2014)
Published in Semiconductors (Woodbury, N.Y.) (2014)
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Journal Article
InGaN/GaN heterostructures grown by submonolayer deposition
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Sakharov, A. V., Musikhin, Yu. G., Usov, S. O., Mizerov, M. N., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Journal Article
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Journal Article
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
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Journal Article
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
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Journal Article
Formation of composite InGaN/GaN/InAlN quantum dots
Tsatsul’nikov, A. F., Zavarin, E. E., Kryzhanovskaya, N. V., Lundin, W. V., Saharov, A. V., Usov, S. O., Brunkov, P. N., Goncharov, V. V., Cherkashin, N. A., Hytch, M.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2010)
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Journal Article
Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes
Barettin, Daniele, Maur, Matthias Auf der, Carlo, Aldo di, Pecchia, Alessandro, Tsatsulnikov, Andrei F, Sakharov, Alexei V, Lundin, Wsevolod V, Nikolaev, Andrei E, Usov, Sergey O, Cherkashin, Nikolay, Hÿtch, Martin J, Karpov, Sergey Yu
Published in Nanotechnology (06.01.2017)
Published in Nanotechnology (06.01.2017)
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Journal Article
Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency
Karpov, S. Yu, Cherkashin, N. A., Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Sinitsin, M. A., Usov, S. O., Zavarin, E. E., Tsatsulnikov, A. F.
Published in Physica status solidi. A, Applications and materials science (01.01.2016)
Published in Physica status solidi. A, Applications and materials science (01.01.2016)
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Journal Article
Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Tsatsulnikov, A.F, Lundin, V.W, Zavarin, E.E, Yagovkina, M.A, Sakharov, A.V, Usov, S.O, Zemlyakov, V.E, Egorkin, V.I, Bulashevich, K.A, Karpov, S.Yu, Ustinov, V.M
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
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Journal Article
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
InGaN/GaN light-emitting diode microwires of submillimeter length
Lundin, W. V., Rodin, S. N., Sakharov, A. V., Lundina, E. Yu, Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Journal Article
Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs
Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Sizov, V. S., Zakgeim, A. L., Mizerov, M. N., Cherkashin, N. A., Hytch, M.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Sizov, V. S., Usov, S. O., Musikhin, Yu. G., Gerthsen, D.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2011)
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Journal Article
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGn/GaN superlattices
Tsatsulnikov, A.F, Lundin, W.V, Sakharov, A.V, Zavarin, E.E, Usov, S.O, Nikolaev, A.E, Kryzhanovskaya, N.V, Synitsin, M.A, Sizov, V.S, Zakgeim, A.L, Mizerov, M.N
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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Journal Article
Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
Kryzhanovskaya, N. V., Lundin, W. V., Nikolaev, A. E., Tsatsul’nikov, A. F., Sakharov, A. V., Pavlov, M. M., Cherkachin, N. A., Hÿtch, M. J., Valkovsky, G. A., Yagovkina, M. A., Usov, S. O.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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Journal Article
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E., Usov, S. O., Sizov, V. S., Mikhailovsky, G. A., Cherkashin, N. A., Hytch, M., Hue, F., Yakovlev, E. V., Lobanova, A. V., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2009)
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Journal Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors
Usov, S. O., Zavarin, E. E., Tsatsul’nikov, A. F., Lundin, V. V., Sakharov, A. V., Nikolaev, A. E., Sinitsyn, M. A., Kryzhanovskaya, N. V., Troshkov, S. I., Ledentsov, N. N.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
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Journal Article
Carrier Redistribution in Blue-Cyan InGaN Dichromatic Light-Emitting Diodes
Arteev, D.S., Sakharov, A.V., Nikolaev, A.E., Usov, S.O., Lundin, W.V., Tsatsulnikov, A.F.
Published in 2018 International Conference Laser Optics (ICLO) (01.06.2018)
Published in 2018 International Conference Laser Optics (ICLO) (01.06.2018)
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