Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs
Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.
Published in Infrared physics & technology (01.09.2021)
Published in Infrared physics & technology (01.09.2021)
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InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths
Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Technical physics (01.02.2018)
Published in Technical physics (01.02.2018)
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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction
Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.01.2018)
Published in Infrared physics & technology (01.01.2018)
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237]
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure
Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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Journal Article
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers
Babichev, A. V., Kurochkin, A. S., Kolodeznyi, E. C., Filimonov, A. V., Usikova, A. A., Nevedomsky, V. N., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
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Journal Article
P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.09.2016)
Published in Infrared physics & technology (01.09.2016)
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Journal Article
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Effect of postgrowth techniques on the characteristics of triple-junction inGaP/GaAs/Ge solar cells
Andreev, V.M, Grebenshchikova, E.A, Dmitriev, P.A, Ilinskaya, N.D, Kalinovsky, V.S, Kontrosh, E.V, Malevskaya, A.V, Usikova, A.A
Published in Semiconductors (Woodbury, N.Y.) (01.09.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2014)
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Journal Article
Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands
Evropeytsev, E. A., Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh, Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., Toropov, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2018)
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Journal Article
Investigation of the Modified Structure of a Quantum Cascade Laser
Mamutin, V. V., Maleev, N. A., Vasilyev, A. P., Ilyinskaya, N. D., Zadiranov, Yu. M., Usikova, A. A., Yagovkina, M. A., Shernyakov, Yu. M., Ustinov, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2018)
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Journal Article
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites
Belyaev, K. G., Usikova, A. A., Jmerik, V. N., Kop’ev, P. S., Ivanov, S. V., Toropov, A. A., Brunkov, P. N.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2015)
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Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
Gadzhiyev, I. M., Buyalo, M. S., Gubenko, A. E., Egorov, A. Yu, Usikova, A. A., Il’inskaya, N. D., Lyutetskiy, A. V., Zadiranov, Yu. M., Portnoi, E. L.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2016)
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On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
Novikov, I. I., Karachinsky, L. Ya, Kolodeznyi, E. S., Bougrov, V. E., Kurochkin, A. S., Gladyshev, A. G., Babichev, A. V., Gadzhiev, I. M., Buyalo, M. S., Zadiranov, Yu. M., Usikova, A. A., Shernyakov, Yu. M., Savelyev, A. V., Nyapshaev, I. A., Egorov, A. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
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Journal Article
Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes
Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2014)
Published in Infrared physics & technology (01.05.2014)
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