Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
Sarua, A., Hangfeng Ji, Hilton, K.P., Wallis, D.J., Uren, M.J., Martin, T., Kuball, M.
Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
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Journal Article
Anomalous Kink Effect in GaN High Electron Mobility Transistors
Meneghesso, G., Zanon, F., Uren, M.J., Zanoni, E.
Published in IEEE electron device letters (01.02.2009)
Published in IEEE electron device letters (01.02.2009)
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Journal Article
Punch-through in short-channel AlGaN/GaN HFETs
Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.
Published in IEEE transactions on electron devices (01.02.2006)
Published in IEEE transactions on electron devices (01.02.2006)
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Journal Article
Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy
Kuball, M., Riedel, G.J., Pomeroy, J.W., Sarua, A., Uren, M.J., Martin, T., Hilton, K.P., Maclean, J.O., Wallis, D.J.
Published in IEEE electron device letters (01.02.2007)
Published in IEEE electron device letters (01.02.2007)
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Journal Article
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation
Sun, H., Montes Bajo, M., Uren, M.J., Kuball, M.
Published in Microelectronics and reliability (01.12.2014)
Published in Microelectronics and reliability (01.12.2014)
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Journal Article
Conference Proceeding
Surface leakage currents in SiNx passivated AlGaN/GaN HFETs
TAN, W. S, UREN, M. J, HOUSTON, P. A, GREEN, R. T, BALMER, R. S, MARTIN, T
Published in IEEE electron device letters (2006)
Published in IEEE electron device letters (2006)
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Journal Article
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Kuball, M., Hayes, J.M., Uren, M.J., Martin, I., Birbeck, J.C.H., Balmer, R.S., Hughes, B.T.
Published in IEEE electron device letters (01.01.2002)
Published in IEEE electron device letters (01.01.2002)
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Journal Article
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J., Kuball, M.
Published in IEEE electron device letters (01.02.2009)
Published in IEEE electron device letters (01.02.2009)
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Journal Article
On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT
Oxley, C.H., Uren, M.J., Coates, A., Hayes, D.G.
Published in IEEE transactions on electron devices (01.03.2006)
Published in IEEE transactions on electron devices (01.03.2006)
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Journal Article
Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs
Rajasingam, S., Pomeroy, J.W., Kuball, M., Uren, M.J., Martin, T., Herbert, D.C., Hilton, K.P., Balmer, R.S.
Published in IEEE electron device letters (01.07.2004)
Published in IEEE electron device letters (01.07.2004)
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Journal Article
Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices
Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Kuball, M.
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
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Journal Article
2 dimensional electron gas uniformity of GaN HFET layers on SiC
Wallis, D.J., Wright, P.J., Soley, D.E.J., Koker, L., Uren, M.J., Martin, T.
Published in Journal of crystal growth (2012)
Published in Journal of crystal growth (2012)
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Journal Article
Analysis of DCaRF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering
Roff, C, Benedikt, J, Tasker, P J, Wallis, D J, Hilton, K P, Maclean, JO, Hayes, D G, Uren, MJ, Martin, T
Published in IEEE transactions on electron devices (01.01.2009)
Published in IEEE transactions on electron devices (01.01.2009)
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Journal Article
High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC
Cuerdo, R., Sillero, E., Romero, M.F., Uren, M.J., di Forte Poisson, M.-A., Munoz, E., Calle, F.
Published in IEEE electron device letters (01.08.2009)
Published in IEEE electron device letters (01.08.2009)
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Journal Article
Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs
Wells, A.M., Uren, M.J., Balmer, R.S., Hilton, K.P., Martin, T., Missous, M.
Published in Solid-state electronics (01.02.2005)
Published in Solid-state electronics (01.02.2005)
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