Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy
Asoka-Kumar, P, Gossmann, H, Unterwald, FC, Feldman, LC, Leung, TC, Au, HL, Talyanski, V, V, Nielsen, B, Lynn, KG
Published in Physical review. B, Condensed matter (15.08.1993)
Published in Physical review. B, Condensed matter (15.08.1993)
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