High-performance poly-Ge short-channel metal-oxide-semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing
Usuda, Koji, Kamata, Yoshiki, Kamimuta, Yuuichi, Mori, Takahiro, Koike, Masahiro, Tezuka, Tsutomu
Published in Applied physics express (01.05.2014)
Published in Applied physics express (01.05.2014)
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Journal Article
Preliminary Evaluation of Toxicologic and Carcinogenic Risks of Copper Gluconate in Rats Given Multiple Carcinogens
Abe, Masayoshi, Suzuki, Noriko, Yoshida, Midori, Igarashi, Maki, Usuda, Koji, Furukawa, Satoshi, Maekawa, Akihiko, Juneja, Lekh Raj, Okubo, Tsutomu, Nakae, Dai
Published in Journal of Toxicologic Pathology (01.01.2006)
Published in Journal of Toxicologic Pathology (01.01.2006)
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Journal Article
Phonon dispersion of bulk Ge-rich SiGe: inelastic X-ray scattering studies
Usuda, Koji, Oyanagi, Yuya, Yokogawa, Ryo, Uchiyama, Hiroshi, Tsutsui, Satoshi, Yonenaga, Ichiro, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.06.2020)
Published in Japanese Journal of Applied Physics (01.06.2020)
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Journal Article
Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates
Sugiyama, Naoharu, Tezuka, Tsutomu, Irisawa, Toshifumi, Usuda, Koji, Moriyama, Yoshihiko, Nakaharai, Shu, Hirashita, Norio, Takagi, Shin-Ichi
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si1−xGex using bulk Ge-rich Si1−xGex crystals and oil-immersion Raman spectroscopy
Yokogawa, Ryo, Takeuchi, Kazuma, Murakami, Tatsumi, Usuda, Koji, Yonenaga, Ichiro, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.10.2018)
Published in Japanese Journal of Applied Physics (01.10.2018)
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Journal Article
Examination of phonon deformation potentials for accurate strain measurements in silicon-germanium alloys with the whole composition range by Raman spectroscopy
Kosemura, Daisuke, Yamamoto, Shotaro, Takeuchi, Kazuma, Usuda, Koji, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
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Journal Article
Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method
Sugiyama, Naoharu, Moriyama, Yoshihiko, Tezuka, Tsutomu, Mizuno, Tomohisa, Nakaharai, Shu, Usuda, Koji, Takagi, Sin-ichi
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si 1− x Ge x using bulk Ge-rich Si 1− x Ge x crystals and oil-immersion Raman spectroscopy
Yokogawa, Ryo, Takeuchi, Kazuma, Murakami, Tatsumi, Usuda, Koji, Yonenaga, Ichiro, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.10.2018)
Published in Japanese Journal of Applied Physics (01.10.2018)
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Journal Article
Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si^sub 1− x^ Ge ^sub x^ using bulk Ge-rich Si^sub 1− x^ Ge ^sub x^ crystals and oil-immersion Raman spectroscopy
Yokogawa, Ryo, Takeuchi, Kazuma, Murakami, Tatsumi, Usuda, Koji, Yonenaga, Ichiro, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.10.2018)
Published in Japanese Journal of Applied Physics (01.10.2018)
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Journal Article
Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method
Usuda, Koji, Tezuka, Tsutomu, Kosemura, Daisuke, Tomita, Motohiro, Ogura, Atsushi
Published in Solid-state electronics (01.05.2013)
Published in Solid-state electronics (01.05.2013)
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