Effect of contact material on amorphous InGaZnO thin-film transistor characteristics
Ueoka, Yoshihiro, Ishikawa, Yasuaki, Bermundo, Juan Paolo, Yamazaki, Haruka, Urakawa, Satoshi, Osada, Yukihiro, Horita, Masahiro, Uraoka, Yukiharu
Published in Japanese Journal of Applied Physics (01.03.2014)
Published in Japanese Journal of Applied Physics (01.03.2014)
Get full text
Journal Article
Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress
Ueoka, Yoshihiro, Ishikawa, Yasuaki, Bermundo, Juan Paolo, Yamazaki, Haruka, Urakawa, Satoshi, Fujii, Mami, Horita, Masahiro, Uraoka, Yukiharu
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
Get full text
Journal Article
The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors
Yamazaki, Haruka, Ishikawa, Yasuaki, Fujii, Mami, Ueoka, Yoshihiro, Fujiwara, Masaki, Takahashi, Eiji, Andoh, Yasunori, Maejima, Naoyuki, Matsui, Hirosuke, Matsui, Fumihiko, Daimon, Hiroshi, Uraoka, Yukiharu
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
Get full text
Journal Article
Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal--Oxide--Semiconductor Field-Effect Transistors on Off-Axis Substrates
Ueoka, Yoshihiro, Shingu, Kenta, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
Get full text
Journal Article
Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates
Ueoka, Yoshihiro, Shingu, Kenta, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
Get full text
Journal Article
Thermal distribution in amorphous InSnZnO thin-film transistor
Urakawa, Satoshi, Tomai, Shigekazu, Ueoka, Yoshihiro, Yamazaki, Haruka, Kasami, Masashi, Yano, Koki, Wang, Dapeng, Furuta, Mamoru, Horita, Masahiro, Ishikawa, Yasuaki, Uraoka, Yukiharu
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
Get full text
Journal Article
Fabrication and characterization of a high-electron-mobility transistor using a sputtering buffer layer on a Si substrate
Ueoka, Yoshihiro, Suemoto, Yuya, Kiuchi, Maki, Takahashi, Tokio, Shimizu, Mitsuaki, Mesuda, Masami
Published in Journal of crystal growth (15.08.2023)
Published in Journal of crystal growth (15.08.2023)
Get full text
Journal Article
Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering
Kushimoto, Maki, Sakai, Tadayoshi, Ueoka, Yoshihiro, Tomai, Shigekazu, Katsumata, Satoshi, Deki, Manato, Honda, Yoshio, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Get full text
Journal Article
MULTILAYER STRUCTURE AND GALLIUM-NITRIDE-BASED SEMICONDUCTOR DEVICE
SUEMOTO Yuya, MESUDA Masami, TSUBUKU Masashi, UEOKA Yoshihiro, NISHIMURA Masumi
Year of Publication 04.05.2023
Get full text
Year of Publication 04.05.2023
Patent