Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating
Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo
Published in Thin solid films (01.04.2014)
Published in Thin solid films (01.04.2014)
Get full text
Journal Article
Conference Proceeding
Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating
Ueno, Naofumi, Sakuraba, Masao, Osakabe, Yoshihiro, Akima, Hisanao, Sato, Shigeo
Published in Materials science in semiconductor processing (01.11.2017)
Published in Materials science in semiconductor processing (01.11.2017)
Get full text
Journal Article
Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating
Motegi, Koya, Ueno, Naofumi, Sakuraba, Masao, Osakabe, Yoshihiro, Akima, Hisanao, Sato, Shigeo
Published in Materials science in semiconductor processing (01.11.2017)
Published in Materials science in semiconductor processing (01.11.2017)
Get full text
Journal Article
Operation characteristics on short pulse below 100 ps based on transverse mode control with free carrier effect in an oxide-confined VCSEL
Suzuki, Ryoichiro, Harasaka, Kazuhiro, Maita, Yutaka, Ueno, Naofumi, Jikutani, Naoto
Published in 2022 28th International Semiconductor Laser Conference (ISLC) (16.10.2022)
Published in 2022 28th International Semiconductor Laser Conference (ISLC) (16.10.2022)
Get full text
Conference Proceeding
C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition
Yamamoto, Yuji, Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Mai, Andreas, Tillack, Bernd
Published in Thin solid films (01.03.2016)
Published in Thin solid films (01.03.2016)
Get full text
Journal Article